Vishay Semiconductors - MOSFETs
2.262 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI3421DV-T1-GE3 TTI: SI3421DV-T1-GE3 Vishay Semiconductors Availability: 9.000In Stock12.000 On Order Expected MOSFETs -30V Vds 20V Vgs TSOP-6 | 9.000In Stock12.000 On Order Expected | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 19.2 mOhms | - 20 V, 20 V | 1 V | 46 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUM110P04-05-E3 TTI: SUM110P04-05-E3 Vishay Semiconductors Availability: 10.400In StockMOSFETs 40V 110A 375W | 10.400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 40 V | 110 A | 5 mOhms | - 20 V, 20 V | 2 V | 185 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
4.900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 20 V, 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840PBF-BE3 SIHF840-E3 | |||||
Mfr: SI2305CDS-T1-GE3 TTI: SI2305CDS-T1-GE3 Vishay Semiconductors Availability: 66.000In Stock9.000 On Order Expected 07-Oct-26 MOSFETs -8V Vds 8V Vgs SOT-23 | 66.000In Stock9.000 On Order Expected 07-Oct-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 8 V | 5.8 A | 35 mOhms | - 8 V, 8 V | 1 V | 12 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2305CDS-T1-BE3 SI2305CDS-GE3 | |||
Mfr: SI2302CDS-T1-GE3 TTI: SI2302CDS-T1-GE3 Vishay Semiconductors Availability: 33.000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 33.000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-GE3 | |||
Mfr: SI7848BDP-T1-E3 TTI: SI7848BDP-T1-E3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 47 A | 9 mOhms | - 20 V, 20 V | 3 V | 33 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET | Reel | SI7848BDP-E3 | |||
Mfr: IRFR9014PBF TTI: IRFR9014PBF Vishay Semiconductors Availability: 1.800In StockMOSFETs P-CH SINGLE -60V TO252 | 1.800In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | - 20 V, 20 V | 2 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SUD50P08-25L-E3 TTI: SUD50P08-25L-E3 Vishay Semiconductors Availability: 4.000In StockMOSFETs 80V 50A 136W 25.2mohm @ 10V | 4.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 80 V | 50 A | 25.2 mOhms | - 20 V, 20 V | 1 V | 105 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD50P08-25L-BE3 | |||
3.600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 20 V, 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740PBF-BE3 SIHF740-E3 | |||||
Mfr: SI3456DDV-T1-GE3 TTI: SI3456DDV-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 6.000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 6.3 A | 40 mOhms | - 20 V, 20 V | 3 V | 2.8 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3456DDV-T1-BE3 SI3456DDV-GE3 | |||
Mfr: SI3585CDV-T1-GE3 TTI: SI3585CDV-T1-GE3 Vishay Semiconductors Availability: 3.000In Stock6.000 On Order Expected 01-Dec-26 MOSFETs -20V Vds 12V Vgs TSOP-6 N&P PAIR | 3.000In Stock6.000 On Order Expected 01-Dec-26 | Si | SMD/SMT | TSOP-6 | N-Channel, P-Channel | 2 Channel | 20 V | 2.1 A, 3.9 A | 58 mOhms, 195 mOhms | - 8 V, 8 V | 600 mV | 3.2 nC, 6 nC | - 55 C | + 150 C | 1.3 W, 1.4 W | Enhancement | TrenchFET | Reel | SI3585CDV-GE3 | |||
Mfr: SI1902CDL-T1-GE3 TTI: SI1902CDL-T1-GE3 Vishay Semiconductors Availability: 15.000In StockMOSFETs 20V Vds 12V Vgs SC70-6 | 15.000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.1 A | 235 mOhms | - 12 V, 12 V | 1.5 V | 2 nC | - 55 C | + 150 C | 420 mW | Enhancement | TrenchFET | Reel | SI1902CDL-T1-BE3 SI1958DH-T1-GE3 | |||
Mfr: SIR873DP-T1-GE3 TTI: SIR873DP-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs -150V Vds 20V Vgs PowerPAK SO-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 150 V | 37 A | 39.5 mOhms | - 20 V, 20 V | 4 V | 25 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7465DP-T1-GE3 TTI: SI7465DP-T1-GE3 Vishay Semiconductors Availability: 18.000In StockMOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 18.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 60 V | 3.2 A | 64 mOhms | - 20 V, 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7465DP-GE3 | |||
Mfr: SI2343CDS-T1-GE3 TTI: SI2343CDS-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 3.000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5.9 A | 45 mOhms | - 20 V, 20 V | 2.5 V | 7 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2343CDS-T1-BE3 SI2343CDS-GE3 | |||
Mfr: IRFR420TRPBF TTI: IRFR420TRPBF Vishay Semiconductors Availability: 4.000In StockMOSFETs N-CH SINGLE 500V DPAK TO-252 | 4.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | - 30 V, 30 V | 4 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR420TRPBF-BE3 | ||||
Mfr: SI3459BDV-T1-GE3 TTI: SI3459BDV-T1-GE3 Vishay Semiconductors Availability: 15.000In Stock15.000 On Order Expected 07-Oct-26 MOSFETs -60V Vds 20V Vgs TSOP-6 | 15.000In Stock15.000 On Order Expected 07-Oct-26 | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 60 V | 2.9 A | 216 mOhms | - 20 V, 20 V | 3 V | 7.7 nC | - 55 C | + 150 C | 3.3 W | Enhancement | TrenchFET | Reel | SI3459BDV-T1-BE3 SI3459BDV-GE3 | |||
Mfr: SI4948BEY-T1-GE3 TTI: SI4948BEY-T1-GE3 Vishay Semiconductors Availability: 5.000In StockMOSFETs -60V Vds 20V Vgs SO-8 | 5.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 60 V | 3.1 A | 120 mOhms | - 20 V, 20 V | 3 V | 22 nC | - 55 C | + 175 C | 2.4 W | Enhancement | TrenchFET | Reel | SI4948BEY-GE3 | |||
Mfr: SI7949DP-T1-E3 TTI: SI7949DP-T1-E3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 60 V | 5 A | 64 mOhms | - 20 V, 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7949DP-E3 | |||
Mfr: SUD19P06-60-GE3 TTI: SUD19P06-60-GE3 Vishay Semiconductors Availability: 12.000In StockMOSFETs 60V 19A 38.5W 60mohm @ 10V | 12.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 19 A | 60 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD19P06-60-BE3 | |||
Mfr: SIR876ADP-T1-GE3 TTI: SIR876ADP-T1-GE3 Vishay Semiconductors Availability: 12.000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 12.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 40 A | 9 mOhms | - 20 V, 20 V | 1.5 V | 49 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR876ADP-GE3 | |||
Mfr: SI4174DY-T1-GE3 TTI: SI4174DY-T1-GE3 Vishay Semiconductors Availability: 5.000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 5.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 17 A | 9.5 mOhms | - 20 V, 20 V | 1 V | 27 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4174DY-GE3 | |||
Mfr: SI4435DDY-T1-GE3 TTI: SI4435DDY-T1-GE3 Vishay Semiconductors Availability: 175.000In StockMOSFETs -30V Vds 20V Vgs SO-8 | 175.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 11.4 A | 24 mOhms | - 20 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4435DDY-GE3 | |||
Mfr: SI2374DS-T1-GE3 TTI: SI2374DS-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 6.000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 5.9 A | 30 mOhms | - 8 V, 8 V | 1 V | 7.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2374DS-T1-BE3 | |||
Mfr: SI7450DP-T1-E3 TTI: SI7450DP-T1-E3 Vishay Semiconductors Availability: 3.000In StockMOSFETs RECOMMENDED ALT SI74 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 5.3 A | 80 mOhms | - 20 V, 20 V | 4.5 V | 42 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7450DP-E3 |
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