Vishay Semiconductors - MOSFETs
2.262 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIRA12DDP-T1-UE3 TTI: SIRA12DDP-T1-UE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK SO-8 | 0In Stock | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | - 30 V, 30 V | 2 V | 16 nC | - 55 C | + 150 C | 69 W | Enhancement | Reel | ||||||
Mfr: SISS72DN-T1-GE3 TTI: SISS72DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK1212-8 | N-Channel | 1 Channel | 150 V | 25.5 A | 42 mOhms | - 20 V, 20 V | 2 V | 22 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, ThunderFET, PowerPAK | Reel | ||||
Mfr: SIR5402DP-T1-UE3 TTI: SIR5402DP-T1-UE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 40V PPK SO8 | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 40 V | 201.5 A | 1.2 mOhms | 20 V | 3.5 V | 82 nC | - 55 C | + 150 C | 92.5 mW | Enhancement | Reel | |||||
Mfr: SIHB068N60EF-GE3 TTI: SIHB068N60EF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO263 | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 41 A | 68 mOhms | - 30 V, 30 V | 5 V | 51 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | ||||||
Mfr: SIDR626EP-T1-RE3 TTI: SIDR626EP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 60V PPAKSO8DC | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | - 20 V, 20 V | 4 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
Mfr: IRF9Z10PBF TTI: IRF9Z10PBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRF9 | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 6.7 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF9Z10PBF-BE3 | ||||
Mfr: IRL510STRLPBF TTI: IRL510STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 5.6 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 10 V, 10 V | 1 V | 6.1 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | |||||
Mfr: SI7716ADN-T1-GE3 TTI: SI7716ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 16 A | 13.5 mOhms | - 20 V, 20 V | 2.5 V | 15.4 nC | - 55 C | + 150 C | 27.7 W | Enhancement | TrenchFET | Reel | SI7716ADN-GE3 | |||
Mfr: SI8817DB-T2-E1 TTI: SI8817DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 2.9 A | 61 mOhms | - 8 V, 8 V | 1 V | 19 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFU9220PBF TTI: IRFU9220PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -200V TO251 | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 200 V | 3.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRLIZ44GPBF TTI: IRLIZ44GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 30 Amp | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 30 A | 28 mOhms | - 10 V, 10 V | 1 V | 66 nC | - 55 C | + 175 C | 48 W | Enhancement | Tube | |||||
Mfr: IRFR220TRRPBF TTI: IRFR220TRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V TO252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRF9640STRRPBF TTI: IRF9640STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -200V TO263 | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 18 A | 225 mOhms | - 30 V, 30 V | 5 V | 65 nC | - 55 C | + 150 C | 223 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIZF660LDT-T1-GE3 TTI: SIZF660LDT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH DUAL 60V PPAIR 6X5FS | 0In Stock | Reel | ||||||||||||||||||||
Mfr: IRFI9530GPBF TTI: IRFI9530GPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -100V TO220 | 0In Stock | Si | Through Hole | TO-220FP-3 | P-Channel | 1 Channel | 100 V | 7.7 A | 300 mOhms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 175 C | 38 W | Enhancement | Tube | |||||
Mfr: SIZF4412DT-T1-GE3 TTI: SIZF4412DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH DUAL 40V PPAIR 3X3FS | 0In Stock | Reel | ||||||||||||||||||||
Mfr: SIHL023N60E-GE3 TTI: SIHL023N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 650V TO-247AD | 0In Stock | Si | Through Hole | TO-247AD-4L | N-Channel | 1 Channel | 600 V | 96 A | 23 mOhms | 30 V | 5 V | 150 nC | - 55 C | + 150 C | 521 W | Enhancement | Tube | |||||
Mfr: SIHL050N65SF-GE3 TTI: SIHL050N65SF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 650V TO-247AD | 0In Stock | Si | Through Hole | TO-247AD-4L | N-Channel | 1 Channel | 650 V | 64 A | 52 mOhms | 20 V | 5 V | 141 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 148 A | 3.6 mOhms | - 20 V, 20 V | 4 V | 40 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 4.9 mOhms | - 20 V, 20 V | 2.4 V | 54 nC | - 55 C | + 175 C | 48 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 46 A | 2 mOhms | - 20 V, 20 V | 1 V | 110 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4136DY-GE3 | ||||
Mfr: SI5513CDC-T1-E3 TTI: SI5513CDC-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 20 V | 3.7 A, 4 A | 55 mOhms, 150 mOhms | - 12 V, 12 V | 600 mV | 4.2 nC, 5.6 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5513CDC-E3 | |||
Mfr: SI2303CDS-T1-E3 TTI: SI2303CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | - 20 V, 20 V | 1 V | 4 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI2303CDS-T1-BE3 SI2303CDS-E3 |
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