Vishay Semiconductors - MOSFETs
2.277 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFR120PBF TTI: IRFR120PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 7.7 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | 20 V | 4 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | IRFR120PBF-BE3 | ||||
Mfr: SI2307CDS-T1-E3 TTI: SI2307CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 3.5 A | 88 mOhms | 20 V | 1 V | 4.1 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2307CDS-T1-BE3 SI2307CDS-E3 | |||
Mfr: SI7898DP-T1-GE3 TTI: SI7898DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 3 A | 85 mOhms | 20 V | 2 V | 17 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7898DP-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 19.2 A | 15.3 mOhms | 25 V | 2.6 V | 135 nC | - 55 C | + 150 C | 5.9 W | Enhancement | TrenchFET | Reel | SI4483ADY-GE3 | ||||
Mfr: SIHFU1N60A-GE3 TTI: SIHFU1N60A-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO251 | 0In Stock | Si | Through Hole | TO-251-3 | Tube | |||||||||||||||||
Mfr: SIR696DP-T1-GE3 TTI: SIR696DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 125V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 125 V | 60 A | 11.5 mOhms | 20 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR826BDP-T1-RE3 TTI: SIR826BDP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 80.8 A | 5.1 mOhms | 20 V | 2 V | 69 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS42DN-T1-GE3 TTI: SISS42DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | N-Channel | 1 Channel | 100 V | 40.5 A | 14.4 mOhms | 20 V | 2 V | 24.8 nC | - 55 C | + 150 C | 57 W | Enhancement | Reel | |||||
Mfr: SI8812DB-T2-E1 TTI: SI8812DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 3.2 A | 60 mOhms | 8 V | 400 mV | 17 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 19 A | 201 mOhms | 30 V | 3 V | 21 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 6.83 mOhms | - 16 V, 20 V | 2.4 V | 12.2 nC | - 55 C | + 150 C | 17 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 41 A | 68 mOhms | 30 V | 5 V | 51 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||||
Mfr: SISS5710DN-T1-GE3 TTI: SISS5710DN-T1-GE3 Vishay Semiconductors MOSFETs N-CH SINGLE 150V PPAK1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 20 V | 4 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
Mfr: SUD40151EL-GE3 TTI: SUD40151EL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs TO-252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 42 A | 12 mOhms | 20 V | 1.5 V | 74.3 nC | - 55 C | + 175 C | 50 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 10 V | 1 V | 8.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Tube | ||||||
Mfr: SISS27ADN-T1-GE3 TTI: SISS27ADN-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 50 A | 4.2 mOhms | 20 V | 2.2 V | 117 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI8819EDB-T2-E1 TTI: SI8819EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 12 V | 2.9 A | 80 mOhms | 8 V | 900 mV | 7 nC | - 55 C | + 150 C | 900 mW | Enhancement | Reel | |||||
Mfr: SI3493BDV-T1-GE3 TTI: SI3493BDV-T1-GE3 Vishay Semiconductors MOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | 8 V | 900 mV | 43.5 nC | - 55 C | + 150 C | 2.97 W | Enhancement | TrenchFET | Reel | SI3493BDV-T1-BE3 SI3493BDV-GE3 | |||
Mfr: SISS78LDN-T1-UE3 TTI: SISS78LDN-T1-UE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 70V PPK 1212 8S | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8S | N-Channel | 1 Channel | 70 V | 66.7 A | 5.8 mOhms | 20 V | 2.3 V | 32 nC | - 55 C | + 150 C | 57 W | Enhancement | Reel | |||||
Mfr: SIR680ADP-T1-RE3 TTI: SIR680ADP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 80V PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 125 A | 2.88 mOhms | 20 V | 3.5 V | 43 nC, 55 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRF9620PBF TTI: IRF9620PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -200V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 3.5 A | 1.5 Ohms | 20 V | 4 V | 22 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | IRF9620PBF-BE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9.9 A | 180 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 17 A | 100 mOhms | 20 V | 4 V | 25 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRFZ24PBF-BE3 | |||||
0In Stock | Si | Through Hole | N-Channel | 1 Channel | 60 V | 50 A | 18 mOhms | 20 V | 4 V | 110 nC | - 55 C | + 175 C | 190 W | Enhancement | Tube | |||||||
Mfr: IRF840LCLPBF TTI: IRF840LCLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 500V TO262 | 0In Stock | Si | Through Hole | TO-262-3 | Tube |