Vishay Semiconductors - MOSFETs
2.265 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SUM90P10-19L-E3 TTI: SUM90P10-19L-E3 Vishay Semiconductors Availability: 6.400In Stock6.400 On Order Expected MOSFETs 100V 90A 375W 19mohm @ 10V | 6.400In Stock6.400 On Order Expected | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 90 A | 19 mOhms | - 20 V, 20 V | 1 V | 217 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRF840SPBF TTI: IRF840SPBF Vishay Semiconductors Availability: 50In StockMOSFETs N-CH SINGLE 500V TO263 | 50In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | - 20 V, 20 V | 4 V | 24 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820PBF-BE3 | |||||
Mfr: IRFR420PBF TTI: IRFR420PBF Vishay Semiconductors Availability: 4.125In StockMOSFETs N-CH SINGLE 500V TO252 | 4.125In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | - 30 V, 30 V | 2 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
400In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 3.3 A | 1.8 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF720PBF-BE3 | |||||
Mfr: IRFR220TRPBF TTI: IRFR220TRPBF Vishay Semiconductors Availability: 2.000In StockMOSFETs N-Chan 200V 4.8 Amp | 2.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: SI1077X-T1-GE3 TTI: SI1077X-T1-GE3 Vishay Semiconductors Availability: 48.000In StockMOSFETs -20V Vds 8V Vgs SC89-6 | 48.000In Stock | Si | SMD/SMT | SC-89-6 | P-Channel | 1 Channel | 20 V | 1.75 A | 65 mOhms | - 8 V, 8 V | 1 V | 31.1 nC | - 55 C | + 150 C | 330 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4174DY-T1-GE3 TTI: SI4174DY-T1-GE3 Vishay Semiconductors Availability: 5.000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 5.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 17 A | 9.5 mOhms | - 20 V, 20 V | 1 V | 27 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4174DY-GE3 | |||
Mfr: IRFL210TRPBF TTI: IRFL210TRPBF Vishay Semiconductors Availability: 37.500In StockMOSFETs N-Chan 200V 0.96 Amp | 37.500In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 200 V | 960 mA | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL210TRPBF-BE3 | ||||
Mfr: SI7949DP-T1-E3 TTI: SI7949DP-T1-E3 Vishay Semiconductors Availability: 3.000In Stock3.000 On Order Expected 21-Aug-26 MOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock3.000 On Order Expected 21-Aug-26 | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 60 V | 5 A | 64 mOhms | - 20 V, 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7949DP-E3 | |||
Mfr: SUD19P06-60-GE3 TTI: SUD19P06-60-GE3 Vishay Semiconductors Availability: 12.000In StockMOSFETs 60V 19A 38.5W 60mohm @ 10V | 12.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 19 A | 60 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD19P06-60-BE3 | |||
Mfr: SI7615ADN-T1-GE3 TTI: SI7615ADN-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 4.4 mOhms | - 12 V, 12 V | 1.5 V | 122 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7621DN-T1-GE3 | |||
Mfr: SIR876ADP-T1-GE3 TTI: SIR876ADP-T1-GE3 Vishay Semiconductors Availability: 18.000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 18.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 40 A | 9 mOhms | - 20 V, 20 V | 1.5 V | 49 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR876ADP-GE3 | |||
Mfr: SI7119DN-T1-GE3 TTI: SI7119DN-T1-GE3 Vishay Semiconductors Availability: 12.000In Stock6.000 On Order Expected 26-Nov-26 MOSFETs -200V Vds 20V Vgs PowerPAK 1212-8 | 12.000In Stock6.000 On Order Expected 26-Nov-26 | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 1.05 Ohms | - 20 V, 20 V | 4 V | 16.2 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7119DN-GE3 | |||
Mfr: SI3456DDV-T1-GE3 TTI: SI3456DDV-T1-GE3 Vishay Semiconductors Availability: 24.000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 24.000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 6.3 A | 40 mOhms | - 20 V, 20 V | 3 V | 2.8 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3456DDV-T1-BE3 SI3456DDV-GE3 | |||
Mfr: IRFP360PBF TTI: IRFP360PBF Vishay Semiconductors Availability: 1.500In Stock1.000 On Order Expected 23-Jun-27 MOSFETs N-CH SINGLE 400V TO247 | 1.500In Stock1.000 On Order Expected 23-Jun-27 | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 400 V | 23 A | 200 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IRFR9014PBF TTI: IRFR9014PBF Vishay Semiconductors Availability: 1.800In StockMOSFETs P-CH SINGLE -60V TO252 | 1.800In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | - 20 V, 20 V | 2 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SI4564DY-T1-GE3 TTI: SI4564DY-T1-GE3 Vishay Semiconductors Availability: 5.000In StockMOSFETs N/P-CH 40V SO-8 | 5.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 40 V | 9.2 A, 10 A | 17.5 mOhms, 21 mOhms | - 20 V, 20 V | 800 mV, 1.2 V | 20.5 nC, 41.5 nC | - 55 C | + 150 C | 3.1 W, 3.2 W | Enhancement | TrenchFET | Reel | SI4542DY-T1-E3-S | |||
Mfr: SI1416EDH-T1-GE3 TTI: SI1416EDH-T1-GE3 Vishay Semiconductors Availability: 24.000In StockMOSFETs 30V Vds 12V Vgs SC70-6 | 24.000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 30 V | 3.9 A | 58 mOhms | - 12 V, 12 V | 1.4 V | 12 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1416EDH-T1-BE3 SI1410EDH-T1-E3-S SI1410EDH-T1-GE3 SI1426DH-T1-E3-S | |||
Mfr: SI2393DS-T1-GE3 TTI: SI2393DS-T1-GE3 Vishay Semiconductors Availability: 6.000In Stock18.000 On Order Expected MOSFETs 30-V (D-S) MOSFET P-CHANNEL | 6.000In Stock18.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.5 A | 22.7 mOhms | - 20 V, 16 V | 2.2 V | 16.8 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI1902CDL-T1-GE3 TTI: SI1902CDL-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 20V Vds 12V Vgs SC70-6 | 6.000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.1 A | 235 mOhms | - 12 V, 12 V | 1.5 V | 2 nC | - 55 C | + 150 C | 420 mW | Enhancement | TrenchFET | Reel | SI1902CDL-T1-BE3 SI1958DH-T1-GE3 | |||
Mfr: IRF9510PBF TTI: IRF9510PBF Vishay Semiconductors Availability: 1.350In StockMOSFETs P-CH SINGLE -100V TO220 | 1.350In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 4 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF9510PBF-BE3 | ||||
Mfr: SI4840BDY-T1-GE3 TTI: SI4840BDY-T1-GE3 Vishay Semiconductors Availability: 20.000In StockMOSFETs 40V Vds 20V Vgs SO-8 | 20.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 19 A | 9 mOhms | - 20 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4840BDY-GE3 | |||
Mfr: SIB452DK-T1-GE3 TTI: SIB452DK-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 190V Vds 16V Vgs PowerPAK SC-75 | 3.000In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 190 V | 1.5 A | 2.4 Ohms | - 16 V, 16 V | 600 mV | 6.5 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB452DK-GE3 | |||
Mfr: SI3460DDV-T1-GE3 TTI: SI3460DDV-T1-GE3 Vishay Semiconductors Availability: 12.000In Stock6.000 On Order Expected 26-Jan-27 MOSFETs 20V Vds 8V Vgs TSOP-6 | 12.000In Stock6.000 On Order Expected 26-Jan-27 | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3460DDV-T1-BE3 SI3460DDV-GE3 |