Vishay Semiconductors - MOSFETs
2.265 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHFU9014-GE3 TTI: SIHFU9014-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -60V TO251 | 0In Stock | Si | Tube | |||||||||||||||||||
Mfr: SIHFZ44STRR-GE3 TTI: SIHFZ44STRR-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 60V TO263 | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SIHFUC20-GE3 TTI: SIHFUC20-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO252 | 0In Stock | Si | Tube | |||||||||||||||||||
Mfr: SIHG70N60EF-GE3 TTI: SIHG70N60EF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SIHW | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 70 A | 38 mOhms | - 30 V, 30 V | 2 V | 380 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
Mfr: IRLR110PBF TTI: IRLR110PBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRLR | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 10 V, 10 V | 1 V | 6.1 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: IRFU430APBF TTI: IRFU430APBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 500V 5.0 Amp | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 500 V | 5 A | 1.7 Ohms | - 30 V, 30 V | 2 V | 24 nC | - 55 C | + 150 C | 110 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.6 A | 850 mOhms | - 20 V, 20 V | 2 V | 67 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | ||||||
Mfr: SIHFBC40ASTRR-GE3 TTI: SIHFBC40ASTRR-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO263 | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SIHL640STRR-GE3 TTI: SIHL640STRR-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V TO263 | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SI8406DB-T2-E1 TTI: SI8406DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 1.5 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-6 | N-Channel | 1 Channel | 20 V | 16 A | 33 mOhms | - 8 V, 8 V | 400 mV | 20 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIS435DNT-T1-GE3 TTI: SIS435DNT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8T | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 30 A | 4.4 mOhms | - 8 V, 8 V | 900 mV | 180 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA533EDJ-T1-GE3 TTI: SIA533EDJ-T1-GE3 Vishay Semiconductors MOSFETs -12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 34 mOhms, 59 mOhms | - 8 V, 8 V | 400 mV | 10 nC, 13 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA533EDJ-GE3 | |||
Mfr: SIHFR310TR-GE3 TTI: SIHFR310TR-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 400V TO252 | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SISS65DN-T1-GE3 TTI: SISS65DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds -/+20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | P-Channel | 1 Channel | 30 V | 94 A | 4.6 mOhms | - 20 V, 20 V | 2.3 V | 138 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | - 20 V, 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2338DS-T1-BE3 SI2338DS-GE3 | ||||
Mfr: SIA449DJ-T1-GE3 TTI: SIA449DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | PowerPAK-SC70-6 | P-Channel | 1 Channel | 30 V | 12 A | 15.5 mOhms | - 12 V, 12 V | 1.5 V | 72 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 8.8 A | 850 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | ||||||
Mfr: SI7812DN-T1-E3 TTI: SI7812DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 75V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 75 V | 16 A | 37 mOhms | - 20 V, 20 V | 3 V | 16 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7812DN-E3 | |||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | - 20 V, 20 V | 4 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF9540PBF-BE3 | |||||
Mfr: SIB406EDK-T1-GE3 TTI: SIB406EDK-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 12V Vgs PowerPAK SC-75 | 0In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 20 V | 6 A | 46 mOhms | - 12 V, 12 V | 600 mV | 12 nC | - 55 C | + 150 C | 10 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB406EDK-GE3 | |||
Mfr: SIR862DP-T1-GE3 TTI: SIR862DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 50 A | 2.8 mOhms | - 20 V, 20 V | 1.2 V | 90 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 2 A | 3.6 Ohms | - 20 V, 20 V | 4 V | 17 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | IRF710PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | - 30 V, 30 V | 2 V | 64 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
Mfr: SI4816BDY-T1-GE3 TTI: SI4816BDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 6.8 A, 11.4 A | 11.5 mOhms, 18.5 mOhms | - 20 V, 20 V | 1 V | 7.8 nC, 11.6 nC | - 55 C | + 150 C | 1.4 W, 2.4 W | Enhancement | TrenchFET | Reel | SI4816DY-T1-E3-S |