Vishay Semiconductors - MOSFETs
2.277 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIR826ADP-T1-GE3 TTI: SIR826ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 60 A | 4.6 mOhms | 20 V | 1.2 V | 86 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7153DN-T1-GE3 TTI: SI7153DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 18 A | 9.5 mOhms | 25 V | 2.5 V | 62 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 50 A | 8.9 mOhms | 20 V | 4 V | 50 nC | - 55 C | + 175 C | 125 W | Enhancement | ThunderFET | Reel | |||||
Mfr: SI7111EDN-T1-GE3 TTI: SI7111EDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 60 A | 8.55 mOhms | 12 V | 1.6 V | 56.5 nC | - 55 C | + 150 C | 52 W | Enhancement | Reel | |||||
Mfr: SI7223DN-T1-GE3 TTI: SI7223DN-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 2 Channel | 30 V | 6 A | 26.4 mOhms | 20 V | 1 V | 26.3 nC | - 55 C | + 150 C | 23 W | Enhancement | Reel | |||||
Mfr: SIDR668ADP-T1-RE3 TTI: SIDR668ADP-T1-RE3 Vishay Semiconductors MOSFETs N-Channel 100 V (D-S) MOSFET, PowerPAK SO-8DC | 0In Stock | Si | SMD/SMT | SO-8DC | N-Channel | 1 Channel | 100 V | 104 A | 4.8 mOhms | 20 V | 4 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS22LDN-T1-GE3 TTI: SISS22LDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 60V PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 60 V | 92.5 A | 3.65 mOhms | 20 V | 2.5 V | 17.4 nC, 37.3 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHB30N60E-GE3 TTI: SIHB30N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | 30 V | 2.8 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SI1480DH-T1-GE3 TTI: SI1480DH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-BE3 | |||
Mfr: SI7619DN-T1-GE3 TTI: SI7619DN-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 24 A | 21 mOhms | 25 V | 1 V | 32 nC | - 55 C | + 150 C | 27.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFBE30STRLPBF TTI: IRFBE30STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs 800V 4.1A 125W | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SISH108DN-T1-GE3 TTI: SISH108DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds; 20/-16V Vgs PowerPAK 1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | 16 V | 1 V | 30 nC | - 55 C | + 150 C | 3.8 W | Enhancement | Reel | |||||
Mfr: SISS32LDN-T1-GE3 TTI: SISS32LDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 80V PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 63 A | 7.2 mOhms | 20 V | 2.5 V | 17.7 nC, 37.5 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 52.1 A | 10 mOhms | 20 V | 4 V | 19.1 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | ||||||
Mfr: SI7431DP-T1-E3 TTI: SI7431DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 174 mOhms | 20 V | 4 V | 135 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7431DP-E3 | |||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 21 A | 200 mOhms | 20 V | 2 V | 61 nC | - 55 C | + 175 C | 180 W | Enhancement | Tube | ||||||
Mfr: IRFI620GPBF TTI: IRFI620GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 4.1 A | 800 mOhms | 20 V | 2 V | 14 nC | - 55 C | + 150 C | 30 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 19 A | 9 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4840BDY-E3 | ||||
Mfr: IRLR110TRPBF TTI: IRLR110TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRLR | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | 10 V | 1 V | 6.1 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 30 V | 60 A | 5.6 mOhms | 20 V | 3 V | 52 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | SI7994DP-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 8 A | 19.2 mOhms | 20 V | 3 V | 62 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4943CDY-GE3 | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 150 V | 530 mA | 1.2 Ohms | 20 V | 4.5 V | 7.7 nC | - 55 C | + 150 C | 750 mW | Enhancement | TrenchFET | Reel | SI2325DS-T1-BE3 SI2325DS-GE3 | ||||
0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5468DC-GE3 | ||||
Mfr: SIR410DP-T1-GE3 TTI: SIR410DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 35 A | 4.8 mOhms | 20 V | 1.2 V | 41 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR410DP-GE3 |