Vishay Semiconductors - MOSFETs
2.265 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4477DY-T1-GE3 TTI: SI4477DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 26.6 A | 6.2 mOhms | - 8 V, 8 V | 600 mV | 125 nC | - 55 C | + 150 C | 6.6 W | Enhancement | TrenchFET | Reel | SI4477DY-GE3 | |||
Mfr: SI5471DC-T1-GE3 TTI: SI5471DC-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 20 V | 6 A | 16.7 mOhms | - 12 V, 12 V | 1.1 V | 96 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI5471DC-GE3 | |||
Mfr: SI8416DB-T2-E1 TTI: SI8416DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 8V Vds 5V Vgs MICRO FOOT 1.5 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-6 | N-Channel | 1 Channel | 8 V | 16 A | 23 mOhms | - 5 V, 5 V | 800 mV | 17 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA817EDJ-T1-GE3 TTI: SIA817EDJ-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 4.5 A | 54 mOhms | - 12 V, 12 V | 1.3 V | 23 nC | - 55 C | + 150 C | 6.5 W | Enhancement | LITTLE FOOT, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 1.7 A | 3.6 Ohms | - 20 V, 20 V | 2 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | ||||||
Mfr: SI7172DP-T1-GE3 TTI: SI7172DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 25 A | 70 mOhms | - 20 V, 20 V | 4 V | 51 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7172DP-GE3 | |||
Mfr: SIJ482DP-T1-GE3 TTI: SIJ482DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 80 V | 60 A | 6.2 mOhms | - 20 V, 20 V | 1.5 V | 47 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET, PowerPAK | Reel | SIJ482DP-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 21 A | 180 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | ||||||
Mfr: SI3443CDV-T1-E3 TTI: SI3443CDV-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 5.97 A | 100 mOhms | - 12 V, 12 V | 1.5 V | 7.53 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI3443CDV-T1-BE3 SI3443CDV-E3 | |||
Mfr: IRF730ASPBF TTI: IRF730ASPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 400V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 30 V, 30 V | 2 V | 22 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | |||||
Mfr: IRFR9120TRLPBF TTI: IRFR9120TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -100V TO252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9120TRLPBF-BE3 | ||||
Mfr: IRFIB7N50APBF TTI: IRFIB7N50APBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 500V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6.6 A | 520 mOhms | - 30 V, 30 V | 2 V | 52 nC | - 55 C | + 150 C | 60 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBE30PBF-BE3 | |||||
Mfr: SIHB30N60E-GE3 TTI: SIHB30N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | - 30 V, 30 V | 2.8 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIRA18ADP-T1-GE3 TTI: SIRA18ADP-T1-GE3 Vishay Semiconductors MOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30.6 A | 8.7 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA430DJT-T1-GE3 TTI: SIA430DJT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs Thin PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 20 V | 12 A | 13.5 mOhms | - 20 V, 20 V | 1 V | 18 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4840BDY-T1-E3 TTI: SI4840BDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 19 A | 9 mOhms | - 20 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4840BDY-E3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 8 A | 19.2 mOhms | - 20 V, 20 V | 3 V | 62 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4943CDY-GE3 | ||||
Mfr: SIR410DP-T1-GE3 TTI: SIR410DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 35 A | 4.8 mOhms | - 20 V, 20 V | 1.2 V | 41 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR410DP-GE3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 2.8 A | 2.38 Ohms | - 30 V, 30 V | 4 V | 9.8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | - 20 V, 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-BE3 | ||||
Mfr: SI3493BDV-T1-E3 TTI: SI3493BDV-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | - 8 V, 8 V | 900 mV | 43.5 nC | - 55 C | + 150 C | 2.97 W | Enhancement | TrenchFET | Reel | SI3493BDV-T1-BE3 SI3493BDV-E3 | |||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 21 A | 200 mOhms | - 20 V, 20 V | 2 V | 61 nC | - 55 C | + 175 C | 180 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 174 mOhms | - 20 V, 20 V | 4 V | 135 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7431DP-E3 | ||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel |