Vishay Semiconductors - MOSFETs
2.265 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRF510SPBF TTI: IRF510SPBF Vishay Semiconductors Availability: 1.300In StockMOSFETs N-Chan 100V 5.6 Amp | 1.300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | ||||
Mfr: SUD15N15-95-E3 TTI: SUD15N15-95-E3 Vishay Semiconductors Availability: 4.000In StockMOSFETs RECOMMENDED ALT SUD1 | 4.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 15 A | 95 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 175 C | 62 W | Enhancement | TrenchFET | Reel | SUD15N15-95-BE3 | |||
Mfr: SI3932DV-T1-GE3 TTI: SI3932DV-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 6.000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 30 V | 3.7 A | 58 mOhms | - 20 V, 20 V | 1.2 V | 6 nC | - 55 C | + 150 C | 1.4 W | Enhancement | TrenchFET | Reel | SI3932DV-GE3 | |||
Mfr: SIRB40DP-T1-GE3 TTI: SIRB40DP-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 40 A | 3.25 mOhms | - 16 V, 20 V | 1.1 V | 93 nC | - 55 C | + 150 C | 46.2 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFBF20SPBF TTI: IRFBF20SPBF Vishay Semiconductors Availability: 1.000In StockMOSFETs N-CH SINGLE 900V TO263 | 1.000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | - 20 V, 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | |||||
Mfr: SISH101DN-T1-GE3 TTI: SISH101DN-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs -30V Vds; +/-25V Vgs PowerPAK 1212-8SH | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | - 25 V, 25 V | 2.5 V | 102 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SI4160DY-T1-GE3 TTI: SI4160DY-T1-GE3 Vishay Semiconductors Availability: 2.500In Stock10.000 On Order Expected 28-Oct-26 MOSFETs 30V Vds 20V Vgs SO-8 | 2.500In Stock10.000 On Order Expected 28-Oct-26 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 25.4 A | 4.9 mOhms | - 20 V, 20 V | 1 V | 54 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4160DY-GE3 | |||
Mfr: SISS23DN-T1-GE3 TTI: SISS23DN-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8S | 3.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 50 A | 3.5 mOhms | - 8 V, 8 V | 900 mV | 300 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFU9120PBF TTI: IRFU9120PBF Vishay Semiconductors Availability: 3.000In StockMOSFETs P-Chan 100V 5.6 Amp | 3.000In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SI7898DP-T1-E3 TTI: SI7898DP-T1-E3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 3 A | 85 mOhms | - 20 V, 20 V | 2 V | 17 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7898DP-T1 | |||
Mfr: SI7469DP-T1-GE3 TTI: SI7469DP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -80V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | - 20 V, 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-GE3 | |||
Mfr: SIR470DP-T1-GE3 TTI: SIR470DP-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 60 A | 1.9 mOhms | - 20 V, 20 V | 1 V | 155 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR814DP-T1-GE3 | |||
Mfr: SIJH600E-T1-GE3 TTI: SIJH600E-T1-GE3 Vishay Semiconductors Availability: 118.000In Stock214.000 On Order Expected MOSFETs N-CH SINGLE 60V PPAK 8X8L | 118.000In Stock214.000 On Order Expected | Si | SMD/SMT | PowerPak-8 | 60 V | - 20 V, 20 V | 4 V | 141 nC | - 55 C | + 175 C | 333 W | Enhancement | Reel | |||||||||
Mfr: SUD09P10-195-GE3 TTI: SUD09P10-195-GE3 Vishay Semiconductors Availability: 2.000In StockMOSFETs -100V 195mOhms@ 10V -8.8A | 2.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 8.8 A | 195 mOhms | - 20 V, 20 V | 2.5 V | 23.2 nC | - 55 C | + 150 C | 113.6 W | Enhancement | TrenchFET | Reel | SUD09P10-195-BE3 | |||
Mfr: SISA35DN-T1-GE3 TTI: SISA35DN-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs P-CHANNEL 30-V (D-S) PowerPAK 1212-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 16 A | 19 mOhms | - 20 V, 20 V | 2.2 V | 28 nC | - 55 C | + 150 C | 24 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFBC30ASPBF TTI: IRFBC30ASPBF Vishay Semiconductors Availability: 500In StockMOSFETs N-Chan 600V 3.6 Amp | 500In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 3.6 A | 2.2 Ohms | - 30 V, 30 V | 2 V | 23 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | |||||
Mfr: SUD08P06-155L-GE3 TTI: SUD08P06-155L-GE3 Vishay Semiconductors Availability: 4.000In StockMOSFETs -30V 0.155ohm@-10V -8.4A P-CH | 4.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.2 A | 280 mOhms | - 20 V, 20 V | 2 V | 19 nC | - 55 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SUD08P06-155L-BE3 | |||
Mfr: SUD50P06-15L-E3 TTI: SUD50P06-15L-E3 Vishay Semiconductors Availability: 10.000In Stock10.000 On Order Expected 24-Feb-27 MOSFETs P-CH 60V 50A | 10.000In Stock10.000 On Order Expected 24-Feb-27 | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | - 20 V, 20 V | 3 V | 110 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR462DP-T1-GE3 TTI: SIR462DP-T1-GE3 Vishay Semiconductors Availability: 18.000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 18.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30 A | 7.9 mOhms | - 20 V, 20 V | 1 V | 20 nC | - 55 C | + 150 C | 41.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR462DP-GE3 | |||
Mfr: SIS407ADN-T1-GE3 TTI: SIS407ADN-T1-GE3 Vishay Semiconductors Availability: 6.000In Stock6.000 On Order Expected 25-Nov-26 MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 6.000In Stock6.000 On Order Expected 25-Nov-26 | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 18 A | 9 mOhms | - 8 V, 8 V | 400 mV | 112 nC | - 55 C | + 150 C | 39.1 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI3410DV-T1-GE3 TTI: SI3410DV-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 3.000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 19.5 mOhms | - 20 V, 20 V | 1 V | 33 nC | - 55 C | + 150 C | 4.1 W | Enhancement | TrenchFET | Reel | SI3410DV-GE3 | |||
Mfr: SUM70101EL-GE3 TTI: SUM70101EL-GE3 Vishay Semiconductors Availability: 800In StockMOSFETs -100V Vds 20V Vgs TO-263 | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 120 A | 10.1 mOhms | - 20 V, 20 V | 2.5 V | 125 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
Mfr: SIDR668DP-T1-GE3 TTI: SIDR668DP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8DC | 3.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 5.05 mOhms | - 20 V, 20 V | 2 V | 72 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9 A | 400 mOhms | - 20 V, 20 V | 4 V | 43 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF630PBF-BE3 | |||||
Mfr: IRFBC40APBF TTI: IRFBC40APBF Vishay Semiconductors Availability: 300In StockMOSFETs N-CH SINGLE 600V TO220 | 300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 30 V, 30 V | 4 V | 42 nC | - 55 C | + 150 C | 96 W | Enhancement | Tube | IRFBC40APBF-BE3 |