Vishay Semiconductors - MOSFETs
2.262 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SISH410DN-T1-GE3 TTI: SISH410DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds; +/-20V Vgs PowerPAK 1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 20 V | 35 A | 4.8 mOhms | - 20 V, 20 V | 1.2 V | 41 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIZ250DT-T1-GE3 TTI: SIZ250DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs DUAL N-CHANNEL 60-V PowerPAIR 3 x 3S | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3S-8 | N-Channel | 2 Channel | 60 V | 38 A | 12.2 mOhms, 1.27 mOhms | - 20 V, 20 V | 1.1 V | 13.5 nC, 13.4 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUM90330E-GE3 TTI: SUM90330E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 35.1 A | 31.2 mOhms | - 20 V, 20 V | 2 V | 32 nC | - 55 C | + 175 C | 125 W | Enhancement | Reel | |||||
Mfr: SIS488DN-T1-GE3 TTI: SIS488DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SIS4 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 40 A | 4.5 mOhms | - 20 V, 20 V | 1.1 V | 32 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 12 V | 34 A | 2.7 mOhms | - 8 V, 8 V | 400 mV | 84 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4838BDY-GE3 | ||||
Mfr: IRFBC40ASTRLPBF TTI: IRFBC40ASTRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 600V 6.2 Amp | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 30 V, 30 V | 2 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRFP250PBF TTI: IRFP250PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V TO247 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 30 A | 85 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI8499DB-T2-E1 TTI: SI8499DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs MICRO FOOT 1.5 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-6 | P-Channel | 1 Channel | 20 V | 16 A | 26 mOhms | - 12 V, 12 V | 1.3 V | 30 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9Z34PBF-BE3 | |||||
Mfr: IRFR9014TRPBF TTI: IRFR9014TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -60V TO252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR9014TRPBF-BE3 | ||||
Mfr: IRFP22N50APBF TTI: IRFP22N50APBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 500V TO247 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 22 A | 230 mOhms | - 30 V, 30 V | 2 V | 120 nC | - 55 C | + 150 C | 277 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 1.8 A | 3 Ohms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 20 W | Enhancement | Tube | IRF9610PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 7.8 A | 1.2 Ohms | - 20 V, 20 V | 2 V | 200 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | ||||||
Mfr: SI7922DN-T1-GE3 TTI: SI7922DN-T1-GE3 Vishay Semiconductors MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 100 V | 2.5 A | 195 mOhms | - 20 V, 20 V | 3.5 V | 5.2 nC | - 55 C | + 150 C | 2.6 W | Enhancement | TrenchFET | Reel | SI7922DN-GE3 | |||
Mfr: SI7540ADP-T1-GE3 TTI: SI7540ADP-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 8 A | 15 mOhms, 28 mOhms | - 12 V, 12 V | 1.4 V | 18 nC, 32 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2369BDS-T1-GE3 TTI: SI2369BDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30-V (D-S) MOSFET P-CHANNEL | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.5 A | 27 mOhms | - 20 V, 16 V | 2.2 V | 12.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 30 V, 30 V | 4.5 V | 22 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730APBF-BE3 | |||||
Mfr: IRFI620GPBF TTI: IRFI620GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 4.1 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 30 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | - 20 V, 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5468DC-GE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 52.1 A | 10 mOhms | - 20 V, 20 V | 4 V | 19.1 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | ||||||
Mfr: SUD90330E-GE3 TTI: SUD90330E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs TO-252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 35.8 A | 31.2 mOhms | - 20 V, 20 V | 4 V | 21 nC | - 55 C | + 175 C | 125 W | Enhancement | Reel | SUD90330E-BE3 | ||||
Mfr: SIHB30N60E-GE3 TTI: SIHB30N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | - 30 V, 30 V | 2.8 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIR410DP-T1-GE3 TTI: SIR410DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 35 A | 4.8 mOhms | - 20 V, 20 V | 1.2 V | 41 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR410DP-GE3 | |||
Mfr: IRFBE30STRLPBF TTI: IRFBE30STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs 800V 4.1A 125W | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SISH108DN-T1-GE3 TTI: SISH108DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds; 20/-16V Vgs PowerPAK 1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | - 16 V, 16 V | 1 V | 30 nC | - 55 C | + 150 C | 3.8 W | Enhancement | Reel |
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