Vishay Semiconductors - MOSFETs
2.277 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI3410DV-T1-GE3 TTI: SI3410DV-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 3.000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 19.5 mOhms | 20 V | 1 V | 33 nC | - 55 C | + 150 C | 4.1 W | Enhancement | TrenchFET | Reel | SI3410DV-GE3 | |||
Mfr: SIJH600E-T1-GE3 TTI: SIJH600E-T1-GE3 Vishay Semiconductors Availability: 40.000In Stock36.000 On Order Expected 15-Jan-27 MOSFETs N-CH SINGLE 60V PPAK 8X8L | 40.000In Stock36.000 On Order Expected 15-Jan-27 | Si | SMD/SMT | PowerPak-8 | 60 V | 20 V | 4 V | 141 nC | - 55 C | + 175 C | 333 W | Enhancement | Reel | |||||||||
Mfr: SI7913DN-T1-GE3 TTI: SI7913DN-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 2 Channel | 20 V | 7.4 A | 37 mOhms | 8 V | 1 V | 15.3 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI7913DN-GE3 | |||
Mfr: SUG80050E-GE3 TTI: SUG80050E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs TO-247 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 100 A | 4.5 mOhms | 20 V | 2 V | 165 nC | - 55 C | + 175 C | 500 W | Enhancement | Reel | |||||
Mfr: SI2301CDS-T1-GE3 TTI: SI2301CDS-T1-GE3 Vishay Semiconductors Availability: 0In Stock381.000 On Order Expected MOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock381.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.1 A | 112 mOhms | 8 V | 1 V | 3.3 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI2301CDS-T1-BE3 SI2301CDS-GE3 | |||
Mfr: SI2323DDS-T1-GE3 TTI: SI2323DDS-T1-GE3 Vishay Semiconductors Availability: 0In Stock114.000 On Order Expected MOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock114.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 5.3 A | 39 mOhms | 8 V | 1 V | 13.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2323DDS-T1-BE3 | |||
Mfr: SUD50P04-08-GE3 TTI: SUD50P04-08-GE3 Vishay Semiconductors Availability: 0In Stock62.000 On Order Expected MOSFETs 40V 50A P-CH MOSFET | 0In Stock62.000 On Order Expected | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 50 A | 8.1 mOhms | 20 V | 2.5 V | 159 nC | - 55 C | + 150 C | 73.5 W | Enhancement | TrenchFET | Reel | SUD50P04-08-BE3 | |||
Mfr: SI2333DDS-T1-GE3 TTI: SI2333DDS-T1-GE3 Vishay Semiconductors Availability: 0In Stock156.000 On Order Expected MOSFETs -12V Vds 8V Vgs SOT-23 | 0In Stock156.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 6 A | 23 mOhms | 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2333DDS-T1-BE3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI2303CDS-T1-BE3 SI2303BDS-T1-E3-S | ||||
Mfr: SI2308CDS-T1-GE3 TTI: SI2308CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 2.6 A | 200 mOhms | 20 V | 3 V | 2 nC | - 55 C | + 150 C | 1.6 W | Enhancement | Reel | |||||
Mfr: SUM110P06-08L-E3 TTI: SUM110P06-08L-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V 110A 272W 8.0mohm @ 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 60 V | 110 A | 8 mOhms | 20 V | 1 V | 160 nC | - 55 C | + 175 C | 272 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD50P06-15-BE3 | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 80 V | 50 A | 25.2 mOhms | 20 V | 1 V | 105 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD50P08-25L-BE3 | ||||
Mfr: SI7489DP-T1-GE3 TTI: SI7489DP-T1-GE3 Vishay Semiconductors Availability: 0In Stock12.000 On Order Expected 28-Apr-28 MOSFETs -100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock12.000 On Order Expected 28-Apr-28 | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 100 V | 28 A | 41 mOhms | 20 V | 1 V | 106 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7489DP-GE3 | |||
Mfr: SI2304DDS-T1-GE3 TTI: SI2304DDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 60 mOhms | 20 V | 1.2 V | 6.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2304DDS-T1-BE3 SI2304DDS-GE3 | |||
Mfr: SIA446DJ-T1-GE3 TTI: SIA446DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 150 V | 7.7 A | 145 mOhms | 20 V | 2.5 V | 8 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2356DS-T1-GE3 TTI: SI2356DS-T1-GE3 Vishay Semiconductors Availability: 0In Stock48.000 On Order Expected 03-Oct-29 MOSFETs 40V Vds 12V Vgs SOT-23 | 0In Stock48.000 On Order Expected 03-Oct-29 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2356DS-T1-BE3 | |||
Mfr: IRFR9024PBF TTI: IRFR9024PBF Vishay Semiconductors Availability: 0In Stock9.000 On Order Expected MOSFETs P-Chan 60V 8.8 Amp | 0In Stock9.000 On Order Expected | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SI2307CDS-T1-GE3 TTI: SI2307CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 3.5 A | 88 mOhms | 20 V | 3 V | 4.1 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2307CDS-T1-BE3 SI2307CDS-GE3 | |||
Mfr: SI7465DP-T1-E3 TTI: SI7465DP-T1-E3 Vishay Semiconductors Availability: 6.000In StockMOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 60 V | 3.2 A | 64 mOhms | 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7465DP-E3 | |||
Mfr: SI2319CDS-T1-GE3 TTI: SI2319CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 4.4 A | 77 mOhms | 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2319CDS-T1-BE3 SI2319CDS-GE3 | |||
Mfr: SI1539CDL-T1-GE3 TTI: SI1539CDL-T1-GE3 Vishay Semiconductors Availability: 0In Stock444.000 On Order Expected MOSFETs -30V Vds 20V Vgs SC70-6 N&P PAIR | 0In Stock444.000 On Order Expected | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 30 V | 700 mA | 388 mOhms, 890 mOhms | 20 V | 2.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1539CDL-T1-BE3 SI1539CDL-GE3 | |||
Mfr: SI4447ADY-T1-GE3 TTI: SI4447ADY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 7.2 A | 45 mOhms | 20 V | 1.2 V | 25 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR422DP-T1-GE3 TTI: SIR422DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 20.5 A | 6.6 mOhms | 20 V | 1.2 V | 48 nC | - 55 C | + 150 C | 34.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR422DP-GE3 | |||
Mfr: IRLL110TRPBF TTI: IRLL110TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 1.5 Amp | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 10 V | 2 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRLL110TRPBF-BE3 |