Vishay Semiconductors - MOSFETs
2.265 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IRFBG20PBF TTI: IRFBG20PBF Vishay Semiconductors Availability: 450In StockMOSFETs RECOMMENDED ALT IRFB | 450In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBG20PBF-BE3 | ||||
Mfr: SI9407BDY-T1-GE3 TTI: SI9407BDY-T1-GE3 Vishay Semiconductors Availability: 2.500In StockMOSFETs -60V Vds 20V Vgs SO-8 | 2.500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 120 mOhms | - 20 V, 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-GE3 | |||
Mfr: SISS12DN-T1-GE3 TTI: SISS12DN-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8S | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 60 A | 1.98 mOhms | - 16 V, 20 V | 1.1 V | 89 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7101DN-T1-GE3 TTI: SI7101DN-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | - 25 V, 25 V | 2.5 V | 68 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2319DS-T1-E3 TTI: SI2319DS-T1-E3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 40V 3.0A 1.25W 82 mohms @ 10V | 3.000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 3 A | 82 mOhms | - 20 V, 20 V | 1 V | 17 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI2319DS-T1-BE3 SI2319DS-E3 | |||
Mfr: IRFPE40PBF TTI: IRFPE40PBF Vishay Semiconductors Availability: 75In StockMOSFETs N-CH SINGLE 800V TO247 | 75In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 5.4 A | 2 Ohms | - 20 V, 20 V | 2 V | 130 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: SI7913DN-T1-GE3 TTI: SI7913DN-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 2 Channel | 20 V | 7.4 A | 37 mOhms | - 8 V, 8 V | 1 V | 15.3 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI7913DN-GE3 | |||
Mfr: SUG80050E-GE3 TTI: SUG80050E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs TO-247 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 100 A | 4.5 mOhms | - 20 V, 20 V | 2 V | 165 nC | - 55 C | + 175 C | 500 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI2303CDS-T1-BE3 SI2303BDS-T1-E3-S | ||||
Mfr: SI2308CDS-T1-GE3 TTI: SI2308CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 2.6 A | 200 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 1.6 W | Enhancement | Reel | |||||
Mfr: SI2318CDS-T1-GE3 TTI: SI2318CDS-T1-GE3 Vishay Semiconductors Availability: 0In Stock78.000 On Order Expected MOSFETs 40V Vds 20V Vgs SOT-23 | 0In Stock78.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | - 20 V, 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2318CDS-T1-BE3 SI2318CDS-GE3 | |||
Mfr: SI2333DDS-T1-GE3 TTI: SI2333DDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 6 A | 23 mOhms | - 8 V, 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2333DDS-T1-BE3 | |||
Mfr: SI2347DS-T1-GE3 TTI: SI2347DS-T1-GE3 Vishay Semiconductors Availability: 0In Stock99.000 On Order Expected MOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock99.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5 A | 33 mOhms | - 20 V, 20 V | 2.5 V | 6.9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2347DS-T1-BE3 | |||
Mfr: SUD50P04-08-GE3 TTI: SUD50P04-08-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V 50A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 50 A | 8.1 mOhms | - 20 V, 20 V | 2.5 V | 159 nC | - 55 C | + 150 C | 73.5 W | Enhancement | TrenchFET | Reel | SUD50P04-08-BE3 | |||
Mfr: SI2328DS-T1-E3 TTI: SI2328DS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | - 20 V, 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | TrenchFET | Reel | SI2328DS-T1-BE3 SI2328DS-E3 | |||
Mfr: SI2301CDS-T1-GE3 TTI: SI2301CDS-T1-GE3 Vishay Semiconductors Availability: 0In Stock27.000 On Order Expected 21-Aug-26 MOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock27.000 On Order Expected 21-Aug-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.1 A | 112 mOhms | - 8 V, 8 V | 1 V | 3.3 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI2301CDS-T1-BE3 SI2301CDS-GE3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD50P06-15-BE3 | ||||
Mfr: SIA446DJ-T1-GE3 TTI: SIA446DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 150 V | 7.7 A | 145 mOhms | - 20 V, 20 V | 2.5 V | 8 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7288DP-T1-GE3 TTI: SI7288DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 20 A | 19 mOhms | - 20 V, 20 V | 1.2 V | 15 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | SI7288DP-GE3 | |||
Mfr: SI2304DDS-T1-GE3 TTI: SI2304DDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 60 mOhms | - 20 V, 20 V | 1.2 V | 6.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2304DDS-T1-BE3 SI2304DDS-GE3 | |||
Mfr: SI7489DP-T1-GE3 TTI: SI7489DP-T1-GE3 Vishay Semiconductors Availability: 0In Stock15.000 On Order Expected 10-May-28 MOSFETs -100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock15.000 On Order Expected 10-May-28 | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 100 V | 28 A | 41 mOhms | - 20 V, 20 V | 1 V | 106 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7489DP-GE3 | |||
Mfr: SUM110P06-08L-E3 TTI: SUM110P06-08L-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V 110A 272W 8.0mohm @ 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 60 V | 110 A | 8 mOhms | - 20 V, 20 V | 1 V | 160 nC | - 55 C | + 175 C | 272 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | - 12 V, 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2356DS-T1-BE3 | ||||
Mfr: SI7850DP-T1-E3 TTI: SI7850DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 6.2 A | 22 Ohms | - 20 V, 20 V | 3 V | 18 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI7850DP-E3 | |||
Mfr: SI2365EDS-T1-GE3 TTI: SI2365EDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 5.9 A | 26.5 mOhms | - 8 V, 8 V | 1 V | 13.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2365EDS-T1-BE3 SI4816DY-T1-E3-S |