Vishay Semiconductors - MOSFETs
2.262 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIS413DN-T1-GE3 TTI: SIS413DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 18 A | 9.4 mOhms | - 10 V, 10 V | 1 V | 73 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1416EDH-T1-GE3 TTI: SI1416EDH-T1-GE3 Vishay Semiconductors Availability: 0In Stock36.000 On Order Expected 27-Aug-26 MOSFETs 30V Vds 12V Vgs SC70-6 | 0In Stock36.000 On Order Expected 27-Aug-26 | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 30 V | 3.9 A | 58 mOhms | - 12 V, 12 V | 1.4 V | 12 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1416EDH-T1-BE3 SI1410EDH-T1-E3-S SI1410EDH-T1-GE3 SI1426DH-T1-E3-S | |||
Mfr: IRFP360PBF TTI: IRFP360PBF Vishay Semiconductors Availability: 0In Stock1.000 On Order Expected 01-Jul-26 MOSFETs N-CH SINGLE 400V TO247 | 0In Stock1.000 On Order Expected 01-Jul-26 | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 400 V | 23 A | 200 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | - 20 V, 20 V | 2 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | ||||||
Mfr: SI2324DS-T1-GE3 TTI: SI2324DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 2.3 A | 234 mOhms | - 20 V, 20 V | 1.2 V | 10.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2324DS-T1-BE3 | |||
Mfr: SI4056DY-T1-GE3 TTI: SI4056DY-T1-GE3 Vishay Semiconductors Availability: 0In Stock10.000 On Order Expected 11-Nov-27 MOSFETs RECOMMENDED ALT SI40 | 0In Stock10.000 On Order Expected 11-Nov-27 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 11.1 A | 17 mOhms | - 20 V, 20 V | 1.5 V | 29.5 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4056DY-GE3 | |||
Mfr: SIRA58ADP-T1-RE3 TTI: SIRA58ADP-T1-RE3 Vishay Semiconductors Availability: 0In Stock3.000 On Order Expected 19-Apr-28 MOSFETs 40V Vds 20/-16V Vgs PowerPAK SO-8 | 0In Stock3.000 On Order Expected 19-Apr-28 | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 109 A | 2.65 mOhms | - 16 V, 20 V | 1.1 V | 61 nC | - 55 C | + 150 C | 56.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR426DP-T1-GE3 TTI: SIR426DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 30 A | 10.5 mOhms | - 20 V, 20 V | 1.2 V | 31 nC | - 55 C | + 150 C | 41.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR426DP-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8.5 A | 19.5 mOhms | - 20 V, 20 V | 1.2 V | 14.5 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4920DY-T1-E3-S | ||||
Mfr: SI7489DP-T1-E3 TTI: SI7489DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 100 V | 28 A | 41 mOhms | - 20 V, 20 V | 1 V | 106 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7489DP-E3 | |||
0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | - 8 V, 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-BE3 SI1988DH-T1-GE3 | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 3.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9220TRPBF-BE3 | |||||
Mfr: SI2333CDS-T1-GE3 TTI: SI2333CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V 5.1A 2.5W 35 mohms @ 4.5V | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 7.1 A | 35 mOhms | - 8 V, 8 V | 1 V | 9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2333CDS-T1-BE3 SI2333CDS-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 12 A | 300 mOhms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9530PBF-BE3 | |||||
Mfr: IRFU9120PBF TTI: IRFU9120PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 5.6 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SI1013CX-T1-GE3 TTI: SI1013CX-T1-GE3 Vishay Semiconductors Availability: 0In Stock24.000 On Order Expected 16-Dec-26 MOSFETs -20V Vds 8V Vgs SC89-3 | 0In Stock24.000 On Order Expected 16-Dec-26 | Si | SMD/SMT | P-Channel | 1 Channel | 20 V | 450 mA | 760 mOhms | - 8 V, 8 V | 1 V | 1.65 nC | - 55 C | + 150 C | 190 mW | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-223-4 | P-Channel | 1 Channel | 100 V | 1.1 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL9110TRPBF-BE3 | |||||
Mfr: SI2336DS-T1-GE3 TTI: SI2336DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.2 A | 42 mOhms | - 8 V, 8 V | 1 V | 10 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2336DS-T1-BE3 SI2336DS-GE3 | |||
Mfr: SI4463CDY-T1-GE3 TTI: SI4463CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 18.6 A | 8 mOhms | - 12 V, 12 V | 600 mV | 108 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA447DJ-T1-GE3 TTI: SIA447DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 12 V | 12 A | 11 mOhms | - 8 V, 8 V | 850 mV | 80 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA447DJ-GE3 | |||
Mfr: SI9926CDY-T1-GE3 TTI: SI9926CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 8 A | 18 mOhms | - 12 V, 12 V | 600 mV | 22 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI9926CDY-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 4 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF640PBF-BE3 | |||||
Mfr: SI4425DDY-T1-GE3 TTI: SI4425DDY-T1-GE3 Vishay Semiconductors Availability: 0In Stock10.000 On Order Expected 08-Mar-28 MOSFETs -30V Vds 20V Vgs SO-8 | 0In Stock10.000 On Order Expected 08-Mar-28 | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 19.7 A | 9.8 mOhms | - 20 V, 20 V | 1.2 V | 53 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4425DDY-GE3 | |||
Mfr: SIA906EDJ-T1-GE3 TTI: SIA906EDJ-T1-GE3 Vishay Semiconductors Availability: 0In Stock3.000 On Order Expected 19-Aug-26 MOSFETs 20V Vds 12V Vgs PowerPAK SC-70 | 0In Stock3.000 On Order Expected 19-Aug-26 | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 20 V | 4.5 A | 46 mOhms | - 8 V, 8 V | 600 mV | 950 pC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA906EDJ-GE3 | |||
Mfr: SI2325DS-T1-E3 TTI: SI2325DS-T1-E3 Vishay Semiconductors Availability: 0In Stock9.000 On Order Expected 07-Jul-26 MOSFETs -150V Vds 20V Vgs SOT-23 | 0In Stock9.000 On Order Expected 07-Jul-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 150 V | 690 mA | 1.2 Ohms | - 20 V, 20 V | 2.5 V | 12 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI2325DS-T1-BE3 SI2325DS-E3 |
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