Welwyn Components / TT Electronics - RF MOSFET Transistors
8 ResultsPart | Availability | Purchasing | RoHS/Lead | Vgs - Gate-Source Breakdown Voltage | Transistor Polarity | Technology | Id - Continuous Drain Current | Vds - Drain-Source Breakdown Voltage | Rds On - Drain-Source Resistance | Operating Frequency | Gain | Output Power | Minimum Operating Temperature | Maximum Operating Temperature | Mounting Style | Package / Case | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | N-Channel | Si | 2 A | 65 V | 1 GHz | 13 dB | 5 W | + 150 C | SMD/SMT | F-0127-8 | ||||||||
Not Available Online | N-Channel | Si | 9 A | 125 V | 500 MHz | 10 dB | 100 W | + 150 C | SMD/SMT | DH | ||||||||
Not Available Online | N-Channel | Si | 8 A | 65 V | 1 GHz | 10 dB | 10 W | + 150 C | SMD/SMT | DBC1-8 | ||||||||
Not Available Online | N-Channel | Si | 4 A | 40 V | 1 GHz | 13 dB | 5 W | + 150 C | SMD/SMT | TO-39-3 | ||||||||
Not Available Online | N-Channel | Si | 1 A | 65 V | 1 GHz | 13 dB | 2.5 W | + 150 C | SMD/SMT | F-0127-8 | ||||||||
Not Available Online | N-Channel | Si | 25 A | 70 V | 175 MHz | 13 dB | 100 W | + 150 C | SMD/SMT | DM | ||||||||
Not Available Online | N-Channel | Si | 5 A | 70 V | 200 MHz | 13 dB | 4 W | + 150 C | Through Hole | TO-220-3 | ||||||||
Not Available Online | N-Channel | Si | 4 A | 65 V | 1 GHz | 10 dB | 10 W | + 150 C | SMD/SMT | Flangeless DP |