YAGEO XSemi - MOSFETs
659 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 30 V | 75 A | 4 mOhms | 20 V | 3 V | 44.8 nC | - 55 C | + 150 C | 1.13 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 40 V | 33.7 A | 2.6 mOhms | - 12 V, 20 V | 2 V | 86 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: XP65SA145DDT8 TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 650V 24.8A 145mOhms | 0In Stock | Si | SMD/SMT | PDFN-5 | N-Channel | 1 Channel | 650 V | 24.8 A | 145 mOhms | 20 V | 4 V | 110 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||
0In Stock | Si | Reel | |||||||||||||||||||
Mfr: XP60SL115DR TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH 600V 28A TO-262 | Not Available Online | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 600 V | 28 A | 115 mOhms | 20 V | 5 V | 91 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | SPPAK-5 | N-Channel | 1 Channel | 60 V | 29.6 A | 3.2 mOhms | 20 V | 4 V | 88 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 100 V | 30 A | 3 mOhms | 20 V | 4 V | 160 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 40 V | 45 A | 16 mOhms | 20 V | 3 V | 51.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 22 A | 115 mOhms | 20 V | 4 V | 93 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 600 V | 21 A | 160 mOhms | 20 V | 4 V | 72 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 180 mOhms | 20 V | 5 V | 67.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 10 A | 420 mOhms | 20 V | 5 V | 35.2 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | 20 V | 4.5 V | 56 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: XP65SC220DH TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 650V 15.8A 220mOhms | 0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 650 V | 15.8 A | 220 mOhms | 20 V | 4.5 V | 48 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 60 V | 100 A | 3.1 mOhms | 20 V | 3 V | 165 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 130 A | 3.58 mOhms | 20 V | 5 V | 128 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
Mfr: XP4NA1R5HCST TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-CH SINGLE 40V SPPAK5X6 | 0In Stock | Si | Reel | ||||||||||||||||||
Mfr: XP6NA6R0CMT-L TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-CH SINGLE 60V PMPAK5X6L | 0In Stock | Si | Tube | ||||||||||||||||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 20 A | 160 mOhms | 20 V | 5 V | 94.4 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 48 A | 12.5 mOhms | 20 V | 5 V | 65.6 nC | - 55 C | + 150 C | 1.13 W | Enhancement | Tube | |||||
Mfr: XP65SL130DI TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 650V 26.2A 130mOhms | 0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 26.2 A | 130 mOhms | 20 V | 5 V | 140.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 31 A | 95 mOhms | 20 V | 4 V | 112 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 40 V | 30.4 A | 3.2 mOhms | 20 V | 5 V | 142 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 10 A | 380 mOhms | 20 V | 4.5 V | 35.2 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube |