YAGEO XSemi - MOSFETs
659 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: XP10NA8R2LMT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-CH SINGLE 100V PMPAK5X6 | 0In Stock | Si | Reel | ||||||||||||||||||
Mfr: XP10NB6R9CST TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-CH SINGLE 100V SPPAK5X6 | 0In Stock | Si | Reel | ||||||||||||||||||
Mfr: XP65SL130DR TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 650V 26.2A 130mOhms | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 650 V | 26.2 A | 140.8 mOhms | 20 V | 5 V | 110 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | ||||
Not Available Online | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 190 A | 1.7 mOhms | 20 V | 4 V | 100 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Not Available Online | Si | SMD/SMT | PMPAK-8 | N-Channel | 2 Channel | 30 V | 27 A | 5 mOhms | 20 V | 2.2 V | 19 nC | - 55 C | + 150 C | 2.27 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 30 V | 183 A | 2.1 mOhms | 20 V | 3 V | 113.6 nC | - 55 C | + 175 C | 2.4 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 60 V | 90 A | 3.8 mOhms | 20 V | 5 V | 123.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 48.4 A | 11 mOhms | 20 V | 3 V | 44.8 nC | - 55 C | + 150 C | 1.13 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 40 V | 75 A | 3.6 mOhms | 20 V | 3 V | 194 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 28 A | 115 mOhms | 20 V | 4 V | 110 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 49 A | 60 mOhms | 20 V | 4.5 V | 149 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | PDFN-5 | N-Channel | 1 Channel | 600 V | 49 A | 65 mOhms | 20 V | 4 V | 144 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 27 A | 120 mOhms | 20 V | 4.5 V | 83 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: XP60SC320DH TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 600V 11.4A 320mOhms | 0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 600 V | 11.4 A | 320 mOhms | 20 V | 4.5 V | 35.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||
Mfr: XP60SE150DH TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 600V 22.1A 150mOhms | 0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 600 V | 22.1 A | 150 mOhms | 20 V | 4.5 V | 76.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||
Mfr: XP65CM200EIT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 650V 21.5A 200mOhms | 0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 21.5 A | 200 mOhms | 20 V | 4 V | 52.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
Mfr: XP65CM220EH TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 650V 20.5A 220mOhms | 0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 650 V | 20.5 A | 220 mOhms | 20 V | 4 V | 52.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||
Mfr: XP65SA130DR TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 650V 26.2A 130mOhms | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 650 V | 26.2 A | 130 mOhms | 20 V | 4 V | 110 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | 20 V | 5 V | 68.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 650 V | 10 A | 420 mOhms | 20 V | 4 V | 35.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Reel | |||||||||||||||||||
Mfr: XP65SL105AFWL TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 650V 30.8A 105mOhms | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 30.8 A | 105 mOhms | 20 V | 5 V | 177.6 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | 20 V | 5 V | 92.8 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Tube | |||||
0In Stock | Si | Reel | |||||||||||||||||||
Mfr: XP60SC180UDIT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 600V 20A 180mOhms | 0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 20 A | 180 mOhms | 20 V | 4.5 V | 57.6 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube |