YAGEO XSemi - MOSFETs
659 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 10 A | 380 mOhms | 20 V | 4.5 V | 35.2 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | P-Channel | 1 Channel | 60 V | 26.8 A | 25 mOhms | 20 V | 3 V | 59.2 nC | 1.92 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 80 V | 60 A | 8 mOhms | 20 V | 5 V | 59.2 nC | - 55 C | + 150 C | 1.13 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.1 mOhms | - 12 V, 20 V | 3 V | 54.4 nC | - 55 C | + 150 C | 52 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 60 V | 65 A | 6.8 mOhms | 20 V | 3 V | 75.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 35.7 A | 2.3 mOhms | 20 V | 3.8 V | 134 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 60 V | 110 A | 3.8 mOhms | 20 V | 4 V | 88 nC | - 55 C | + 175 C | 2.4 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 27 A | 4 mOhms | 20 V | 4 V | 75 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | P-Channel | 1 Channel | 100 V | 7.1 A | 52 mOhms | 20 V | 3 V | 56 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 66 A | 8.2 mOhms | 20 V | 2.5 V | 68.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 60 A | 8 mOhms | 20 V | 5 V | 59.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | PDFN-5 | N-Channel | 1 Channel | 600 V | 43 A | 85 mOhms | 20 V | 4 V | 144 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 31 A | 95 mOhms | 20 V | 4 V | 112 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
Mfr: XP60SC280ADIT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 600V 13.5A 280mOhms | 0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 13.5 A | 280 mOhms | 20 V | 4.5 V | 38 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
Mfr: XP60SC600DIT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 600V 6.5A 600mOhms | 0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 6.5 A | 600 mOhms | 20 V | 4.5 V | 22.4 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 160 mOhms | 20 V | 5 V | 94.4 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 600 V | 20 A | 160 mOhms | 20 V | 5 V | 94.4 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 650 V | 13 A | 320 mOhms | 20 V | 4 V | 48 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 650 V | 10 A | 420 mOhms | 20 V | 5 V | 35.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 38 A | 99 mOhms | 20 V | 5 V | 181 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 45 V | 40 A | 1.8 mOhms | - 12 V, 20 V | 3 V | 80 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 40 V | 75 A | 3.3 mOhms | 20 V | 3 V | 136 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: XP60SA290DWL TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 600V 13.3A 290mOhms | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 13.3 A | 290 mOhms | 20 V | 5 V | 48 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Tube | ||||
Mfr: XP65SA210DDT8 TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 650V 17.8A 210mOhms | 0In Stock | Si | SMD/SMT | PDFN-5 | N-Channel | 1 Channel | 650 V | 17.8 A | 210 mOhms | 20 V | 5 V | 70.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel |