YAGEO XSemi - MOSFETs
659 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 38 A | 99 mOhms | 20 V | 5 V | 181 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Tube | |||||
Mfr: XP12NB4R4CMT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 120V 24.6A 4.4mOhms | 0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 120 V | 24.6 A | 4.4 mOhms | 20 V | 4 V | 153.6 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||
Mfr: XP10NA8R2LIT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 100V 45.5A 8.2mOhms | 0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 100 V | 45.5 A | 8.2 mOhms | 20 V | 2.5 V | 68.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 43.8 A | 1.8 mOhms | 20 V | 2.3 V | 141 nC | - 55 C | + 175 C | 6 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 68 A | 680 uOhms | 20 V | 2.8 V | 192 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 65 A | 740 uOhms | 20 V | 2.5 V | 200 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 31 A | 95 mOhms | 20 V | 4 V | 112 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Tube | |||||
Mfr: XP65SE190DDT8 TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 650V 18.2A 190mOhms | 0In Stock | Si | SMD/SMT | PDFN-5 | N-Channel | 1 Channel | 650 V | 18.2 A | 190 mOhms | 20 V | 4.5 V | 75.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 10 A | 380 mOhms | 20 V | 5 V | 52.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 80 V | 46 A | 8 mOhms | 20 V | 5 V | 59.2 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: XP10N3R8IT TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH 100V 67. 7A TO-220CFM-T | Not Available Online | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 100 V | 67.7 A | 3.88 mOhms | 20 V | 4 V | 82 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 66 A | 6.5 mOhms | 20 V | 4 V | 56 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
Mfr: XP50SL290DH TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-CH SINGLE 500V TO252(H) | 0In Stock | Si | Reel | ||||||||||||||||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 650 V | 7 A | 600 mOhms | 20 V | 5 V | 32.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | 20 V | 5 V | 92.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | 20 V | 5 V | 92.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
Mfr: XP65SL130DP TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 650V 26.2A 130mOhms | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 26.2 A | 130 mOhms | 20 V | 5 V | 140.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | 20 V | 5 V | 92.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: XP10NA011LJV TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 100V 48.4A 11mOhms | 0In Stock | Si | Through Hole | TO-251VS-3 | N-Channel | 1 Channel | 100 V | 48.4 A | 11 mOhms | 20 V | 2.4 V | 44.8 nC | - 55 C | + 150 C | 1.13 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 60 V | 100 A | 4.2 mOhms | 20 V | 4 V | 76 nC | - 55 C | + 175 C | 2.4 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 60 V | 49 A | 6.5 mOhms | 20 V | 4 V | 56 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-251VS-3 | N-Channel | 1 Channel | 60 V | 66 A | 6.5 mOhms | 20 V | 4 V | 56 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 40 V | 75 A | 2.6 mOhms | 20 V | 5 V | 194 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel |