YAGEO XSemi - MOSFETs
659 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | SOT-23S-3 | N-Channel | 1 Channel | 30 V | 4.3 A | 45 mOhms | 20 V | 3 V | 7.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 5.8 A | 50 mOhms | 20 V | 3 V | 6.5 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 30 V | 30 A | 20 mOhms | 20 V | 3 V | 62.4 nC | 2 W | Enhancement | Reel | |||||||
0In Stock | Si | Through Hole | TO-220CFM-3 | P-Channel | 1 Channel | 60 V | 19 A | 50 mOhms | 20 V | 3 V | 52.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 2 Channel | 100 V | 7.3 A | 35 mOhms | 20 V | 4 V | 20 nC | - 55 C | + 150 C | 3.57 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 2 Channel | 100 V | 5.4 A | 45 mOhms | 20 V | 4 V | 20 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 2 Channel | 100 V | 2.2 A | 185 mOhms | 20 V | 3 V | 19.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 40 V | 19.6 A | 40 mOhms | 20 V | 3 V | 19.2 nC | - 55 C | + 150 C | 1.13 W | Enhancement | Tube | |||||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 2 Channel | 60 V | 5 A | 38 mOhms | 20 V | 3 V | 32 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
Mfr: XP6B1K0EU6 TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs P-MOS -60V -0.39A 1000mOhms | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 60 V | 390 mA | 1 Ohms | 20 V | 3 V | 4 nC | - 55 C | + 150 C | 277 mW | Enhancement | Reel | ||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel, P-Channel | 2 Channel | 60 V, 60 V | 4.2 A, 6 A | 36 mOhms, 72 mOhms | 20 V | 3 V, 3 V | 22.4 nC, 25.6 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23S-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 250 mOhms | 20 V | 3 V | 5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | P-Channel | 1 Channel | 30 V | 14.6 A | 10 mOhms | 20 V | 3 V | 34 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 20 A | 7.5 mOhms | 20 V | 2.3 V | 30.4 nC | - 55 C | + 150 C | 16 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-6 | N-Channel, P-Channel | 2 Channel | 30 V, 30 V | 6 A, 6.6 A | 35 mOhms, 48 mOhms | 20 V | 2.5 V, 2.5 V | 6.4 nC, 9.6 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23S-3 | N-Channel | 1 Channel | 20 V | 5.3 A | 30 mOhms | 12 V | 1.25 V | 10.4 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | |||||
Mfr: XP10C155YT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N+P MOS 100V 2.8/-2A 155/285mOhms | 0In Stock | Si | SMD/SMT | PMPAK-6 | N-Channel, P-Channel | 2 Channel | 100 V, 100 V | 2 A, 2.8 A | 155 mOhms, 285 mOhms | 20 V | 3 V, 3 V | 19.2 nC, 25.6 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 100 V | 13.7 A | 14 mOhms | 20 V | 4 V | 44.8 nC | - 55 C | + 175 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 60 V | 14.7 A | 6.8 mOhms | 20 V | 3 V | 75.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 9.2 A | 18 mOhms | 20 V | 3 V | 11.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 2 Channel | 30 V | 8.7 A | 20 mOhms | 20 V | 2.5 V | 8 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SO-8 | P-Channel | 2 Channel | 30 V | 8.3 A | 20 mOhms | 20 V | 3 V | 19.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
Mfr: XP3CA010MT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N+P MOS 30V 15/-11A 9.6/19mOhms | 0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel, P-Channel | 2 Channel | 30 V, 30 V | 11 A, 15 A | 9.6 mOhms, 19 mOhms | 20 V | 2.3 V, 2.3 V | 32 nC, 48 nC | - 55 C | + 150 C | 3.57 W | Enhancement | Reel | ||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 30 V | 37.8 A | 9.5 mOhms | 20 V | 3 V | 17.6 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel |