YAGEO XSemi - MOSFETs
659 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 43.1 A | 1.6 mOhms | 20 V | 3 V | 91.2 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: XP65SA130DP TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 650V 26.2A 130mOhms | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 26.2 A | 130 mOhms | 20 V | 4 V | 110 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 20 A | 198 mOhms | 20 V | 4.5 V | 72 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: XP15NA7R4CDT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 150V 100A 7.4mOhms | 0In Stock | Si | SMD/SMT | PDFN-8 | N-Channel | 1 Channel | 150 V | 18.6 A | 7.4 mOhms | 20 V | 4 V | 146 nC | - 55 C | + 175 C | 6 W | Enhancement | Reel | ||||
Mfr: XP60CM190EDT8 TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 600V 21.6A 190mOhms | 0In Stock | Si | SMD/SMT | PDFN-5 | N-Channel | 1 Channel | 600 V | 21.6 A | 190 mOhms | 20 V | 4 V | 53 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||
0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 100 V | 66 A | 8.4 mOhms | 20 V | 4 V | 67.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 195 A | 2.5 mOhms | 20 V | 4 V | 217.6 nC | - 55 C | + 175 C | 3.75 W | Enhancement | Tube | |||||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 10 A | 380 mOhms | 20 V | 4.5 V | 28.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: XP60SA290ADIT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 600V 13.6A 290mOhms | 0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 13.6 A | 290 mOhms | 20 V | 4.5 V | 48 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
Mfr: XP60SA290DS TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 600V 13.3A 290mOhms | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 600 V | 13.3 A | 290 mOhms | 20 V | 5 V | 48 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | ||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 38.4 A | 2 mOhms | 20 V | 4 V | 122 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 30.8 A | 3.2 mOhms | 20 V | 3 V | 104 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: XP65SA130DI TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 650V 26.2A 130mOhms | 0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 26.2 A | 130 mOhms | 20 V | 4 V | 110 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-251VS-3 | N-Channel | 1 Channel | 60 V | 65 A | 6.8 mOhms | 20 V | 3 V | 75.2 nC | 1.12 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 60 V | 76 A | 3.3 mOhms | 20 V | 3 V | 96 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 60 V | 105 A | 3.5 mOhms | 20 V | 4 V | 99 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 60 V | 62.8 A | 4.6 mOhms | 20 V | 4 V | 75.2 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 88 A | 4.6 mOhms | 20 V | 4 V | 74 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 19 A | 50 mOhms | 20 V | 3 V | 52.8 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 100 V | 35.4 A | 12.5 mOhms | 20 V | 5 V | 65.6 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 48 A | 12.5 mOhms | 20 V | 5 V | 65.6 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 100 V | 45 A | 8.8 mOhms | 20 V | 5 V | 105.6 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: XP10NB3R4LCMT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 100V 28A 3.4mOhms | 0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 100 V | 28 A | 3.4 mOhms | 20 V | 3 V | 150.4 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||
Mfr: XP10NB5R5H TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 100V 103.6A 5.5mOhms | 0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 100 V | 103.6 A | 5.5 mOhms | 20 V | 4 V | 87 nC | - 55 C | + 175 C | 2.4 W | Enhancement | Reel |