SiC Schottky Diodes
452 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Configuration | If - Forward Current | Vrrm - Repetitive Reverse Voltage | Vf - Forward Voltage | Ifsm - Forward Surge Current | Ir - Reverse Current | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: VS-SC200FA120 TTI: VS-SC200FA120 Vishay Availability: 0In StockSiC Schottky Diodes SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 200 A | 0In Stock | Vishay | Screw Mount | SOT-227 | Dual | 100 A | 1.2 kV | 1.45 V | 620 A | 6.85 uA | - 55 C | + 175 C | VS-SC200FA120 | Bulk | ||||
Mfr: VS-3C05ET12S2L-M3 TTI: VS-3C05ET12S2L-M3 Vishay Availability: 0In StockSiC Schottky Diodes SILICON CARBIDE DIODE - D2-PAK | 0In Stock | Vishay | SMD/SMT | TO-263AB-2 | Single | 5 A | 1.2 kV | 1.35 V | 42 A | 2 uA | - 55 C | + 175 C | VS-3C05ET12S2L | Reel | ||||
Mfr: VS-3C02EJ12-M3/H TTI: VS-3C02EJ12-M3/H Vishay Availability: 0In StockSiC Schottky Diodes 2 A 1200V SKY SIC DO221AC | 0In Stock | Vishay | SMD/SMT | DO-221AC-2 | Single | 2 A | 1.2 kV | 1.85 V | 21 A | 5 uA | - 55 C | + 175 C | Reel | |||||
Mfr: VS-3C20CP12L-M3 TTI: VS-3C20CP12L-M3 Vishay Availability: 0In StockSiC Schottky Diodes 2X10A 1200V SKY SIC TO247AD 3L | 0In Stock | Vishay | Through Hole | TO-247 | VS-3C20CP12L | Tube | ||||||||||||
Mfr: VS-4C16ET07T-M3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2202L | 0In Stock | Vishay | Through Hole | TO-220AC-2 | Single | 16 A | 650 V | 1.3 V | 101 A | 94 uA | - 55 C | + 175 C | VS-4C16ET07T-M3 | Tube | ||||
Mfr: VS-4C20ET07S2L-M3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SiCG4D2PAK2L | 0In Stock | Vishay | SMD/SMT | TO-263AB-2 | Single | 20 A | 650 V | 1.33 V | 125 A | 110 uA | - 55 C | + 175 C | VS-4C20ET07S2L-M3 | Reel | ||||
0In Stock | Toshiba | Through Hole | TO-220F-2L | Single | 6 A | 650 V | 1.45 V | 52 A | 300 nA | + 175 C | Tube | TRS6A65F,S1Q(S2 | ||||||
0In Stock | Toshiba | Through Hole | TO-247-3 | Dual Anode Common Cathode | 16 A | 650 V | 1.6 V | 130 A | 400 nA | + 175 C | Tube | |||||||
Mfr: BSDD06G65E2 TTI: Not Assigned Bourns Availability: 0In StockSiC Schottky Diodes 650V 6A High Surge SiC diode in TO252 | 0In Stock | Bourns | SMD/SMT | TO-252-3 | Single | 6 A | 650 V | 1.45 V | 36 A | 300 nA | - 55 C | + 175 C | BSD | Reel | ||||
0In Stock | Toshiba | Through Hole | TO-220-2 | Single | 8 A | 650 V | 1.45 V | 69 A | 400 nA | + 175 C | Tube | TRS8E65F,S1Q(S | ||||||
Mfr: VS-4C30ET07THM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2202L | 0In Stock | Vishay | Through Hole | TO-220AC-2 | SIngle | 30 A | 650 V | 1.33 V | 180 A | 125 uA | - 55 C | + 175 C | VS-4C30ET07THM3 | Tube | ||||
Mfr: VS-4C10EP12LHM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2472L | 0In Stock | Vishay | Through Hole | TO-247AD-2 | Single | 10 A | 1.2 kV | 1.34 V | 50 A | 162 uA | - 55 C | + 175 C | VS-4C10EP12LHM3 | Tube | ||||
Mfr: TRS8V65H,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC Schottky Diodes G3 SiC-SBD 650V 8A DFN8x8 | 0In Stock | Toshiba | SMD/SMT | DFN-8 | 8 A | 650 V | 1.2 V | 410 A | 2 uA | Reel | ||||||||
Mfr: VS-4C15EP12LHM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2472L | 0In Stock | Vishay | Through Hole | TO-247AD-2 | Single | 15 A | 1.2 kV | 1.36 V | 75 A | 200 uA | - 55 C | + 175 C | VS-4C15EP12LHM3 | Tube | ||||
Mfr: VS-4C30ET12THM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2202L | 0In Stock | Vishay | Through Hole | TO-220AC-2 | Single | 30 A | 1.2 kV | 1.36 V | 144 A | 550 uA | - 55 C | + 175 C | VS-4C30ET12THM3 | Tube | ||||
Mfr: VS-4C10ET07S2L-M3 TTI: Not Assigned Vishay Availability: 0In StockSiC Schottky Diodes Rectifier, Silicon Carbide, 650V, 10A, Gen 4, single, D2PAK 2L (TO-263AB 2L) | 0In Stock | Vishay | SMD/SMT | TO-263AB-2 | Single | 10 A | 650 V | 1.3 V | 60 A | 2 uA | - 55 C | + 175 C | VS-4C10ET07S2L-M3 | Reel | ||||
Mfr: VS-4C60CP07LHM3 TTI: Not Assigned Vishay Availability: 0In StockSiC Schottky Diodes Rectifier, Silicon Carbide, 650V, 2x30A, Gen 4, dual, common-cathode, TO-247AD 3L, auto-grade | 0In Stock | Vishay | Through Hole | TO-247AD-3 | Common Cathode | 30 A | 650 V | 1.33 V | 180 A | 7 uA | - 55 C | + 175 C | VS-4C60CP07LHM3 | Tube | ||||
0In Stock | Toshiba | Through Hole | TO-247-3 | Common Anode | 64 A | 1.2 kV | 1.27 V | 1.38 kA | 1 uA | - 55 C | + 175 C | Tube | ||||||
Mfr: LSIC2SD065D40CC TTI: Not Assigned Littelfuse Availability: 0In StockSiC Schottky Diodes 650 V SiC Schottky Barrier Diodes in TO-263-2L D2PAK | 0In Stock | Littelfuse | SMD/SMT | TO-263-2L | Common Cathode | 96 A | 650 V | 1.7 V | 95 A | 3 uA | - 55 C | + 175 C | Reel | |||||
0In Stock | Toshiba | Through Hole | TO-247-2 | Single | 50 A | 1.2 kV | 1.27 V | 940 A | 1.4 uA | - 55 C | + 175 C | Tube | ||||||
Mfr: VS-4C15ET12THM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2202L | 0In Stock | Vishay | Through Hole | TO-220AC-2 | Single | 15 A | 1.2 kV | 1.36 V | 75 A | 200 uA | - 55 C | + 175 C | VS-4C15ET12THM3 | Tube | ||||
Mfr: VS-4C16EP07L-M3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2472L | 0In Stock | Vishay | Through Hole | TO-247AD-2 | Single | 16 A | 650 V | 1.3 V | 101 A | 94 uA | - 55 C | + 175 C | VS-4C16EP07L-M3 | Tube | ||||
Mfr: VS-4C16ET07S2L-M3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SiCG4D2PAK2L | 0In Stock | Vishay | SMD/SMT | TO-263AB-2 | Single | 16 A | 650 V | 1.3 V | 101 A | 94 uA | - 55 C | + 175 C | VS-4C16ET07S2L-M3 | Reel | ||||
Mfr: VS-4C30ET07S2LHM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SiCG4D2PAK2L | 0In Stock | Vishay | SMD/SMT | TO-263AB-2 | SIngle | 30 A | 650 V | 1.33 V | 180 A | 125 uA | - 55 C | + 175 C | VS-4C30ET07S2LHM3 | Reel | ||||
Mfr: VS-4C10ET07T-M3 TTI: Not Assigned Vishay Availability: 0In StockSiC Schottky Diodes Rectifier, Silicon Carbide, 650V, 10A, Gen 4, single, TO-220AC 2L | 0In Stock | Vishay | Through Hole | TO-220AC-2 | Single | 10 A | 650 V | 1.3 V | 60 A | 2 uA | - 55 C | + 175 C | VS-4C10ET07T-M3 | Tube |
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