SiC Schottky Diodes
452 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Configuration | If - Forward Current | Vrrm - Repetitive Reverse Voltage | Vf - Forward Voltage | Ifsm - Forward Surge Current | Ir - Reverse Current | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: VS-4C30CP07L-M3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2473L | 0In Stock | Vishay | Through Hole | TO-247AD-3 | Common Cathode | 16 A | 650 V | 1.3 V | 101 A | 94 uA | - 55 C | + 175 C | VS-4C30CP07L-M3 | Tube | ||||
Mfr: TRS10V65H,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC Schottky Diodes G3 SiC-SBD 650V 10A DFN8x8 | 0In Stock | Toshiba | SMD/SMT | DFN-8 | 10 A | 650 V | 1.2 V | 510 A | 2 uA | Reel | ||||||||
0In Stock | Littelfuse | SMD/SMT | TO-252-2 | Single | 34 A | 1.2 kV | 1.48 V | 90 A | 1 uA | - 55 C | + 175 C | Reel | ||||||
0In Stock | Toshiba | Through Hole | TO-247-3 | Dual Anode Common Cathode | 12 A | 650 V | 1.6 V | 104 A | 300 nA | + 175 C | Tube | |||||||
0In Stock | Toshiba | Through Hole | TO-247-3 | Dual Anode Common Cathode | 24 A | 650 V | 1.6 V | 184 A | 600 nA | + 175 C | Tube | |||||||
0In Stock | Littelfuse | Through Hole | TO-247-2 | Single | 70 A | 1.7 kV | 1.5 V | 144 A | 2 uA | - 55 C | + 175 C | LSIC2SD170Bx | Tube | |||||
0In Stock | Toshiba | Through Hole | TO-247-3 | Common Cathode | 82 A | 1.2 kV | 1.27 V | 1.88 kA | 1.4 uA | + 175 C | ||||||||
Mfr: VS-4C30EP07LHM3 TTI: Not Assigned Vishay Availability: 0In StockSiC Schottky Diodes Rectifier, Silicon Carbide, 650V, 30A, Gen 4, single, TO-247AD 2L, auto-grade | 0In Stock | Vishay | Through Hole | TO-247AD-2 | Single | 30 A | 650 V | 1.33 V | 180 A | 7 uA | - 55 C | + 175 C | VS-4C30EP07LHM3 | Tube | ||||
Mfr: VS-4C60CP07L-M3 TTI: Not Assigned Vishay Availability: 0In StockSiC Schottky Diodes Rectifier, Silicon Carbide, 650V, 2x30A, Gen 4, dual, common-cathode, TO-247AD 3L | 0In Stock | Vishay | Through Hole | TO-247AD-3 | Common Cathode | 30 A | 650 V | 1.33 V | 180 A | 7 uA | - 55 C | + 175 C | VS-4C60CP07L-M3 | Tube | ||||
Mfr: VS-4C30ET12S2LHM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SiCG4D2PAK2L | 0In Stock | Vishay | TO-263AB-2 | Single | 30 A | 1.2 kV | 1.36 V | 144 A | 550 uA | - 55 C | + 175 C | VS-4C30ET12S2LHM3 | Reel | |||||
Mfr: VS-4C40CP07L-M3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2473L | 0In Stock | Vishay | Through Hole | TO-247AD-3 | Common Cathode | 20 A | 650 V | 1.33 V | 125 A | 110 uA | - 55 C | + 175 C | VS-4C40CP07L-M3 | Tube | ||||
Mfr: VS-4C12ET07S2LHM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SiCG4D2PAK2L | 0In Stock | Vishay | SMD/SMT | TO-263AB-2 | Single | 12 A | 650 V | 1.3 V | 72 A | 84 uA | -55 C | + 175 C | VS-4C12ET07S2LHM3 | Reel | ||||
Mfr: TRS4E65H,S1Q TTI: Not Assigned Toshiba Availability: 0In StockSiC Schottky Diodes G3 SiC-SBD 650V 4A TO-220-2L | 0In Stock | Toshiba | Through Hole | TO-220-2L | 4 A | 650 V | 1.2 V | 230 A | 2 uA | Tube | ||||||||
0In Stock | Toshiba | Through Hole | TO-220-2 | Single | 6 A | 650 V | 1.45 V | 55 A | 300 nA | + 175 C | Tube | TRS6E65F,S1Q(S | ||||||
0In Stock | Toshiba | Through Hole | TO-220F-2L | Single | 12 A | 650 V | 1.45 V | 92 A | 600 nA | + 175 C | Tube | TRS12A65F,S1Q(S2 | ||||||
0In Stock | Toshiba | Through Hole | TO-220F-2L | Single | 3 A | 650 V | 1.45 V | 27 A | 200 nA | + 175 C | Tube | TRS3E65F,S1Q(S | ||||||
0In Stock | Toshiba | Through Hole | TO-220F-2L | Single | 4 A | 650 V | 1.45 V | 39 A | 200 nA | + 175 C | Tube | TRS4E65F,S1Q(S | ||||||
Mfr: VS-4C12ET07THM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2202L | 0In Stock | Vishay | Through Hole | TO-220AC-2 | Single | 12 A | 650 V | 1.3 V | 72 A | 84 uA | -55 C | + 175 C | VS-4C12ET07THM3 | Tube | ||||
Mfr: VS-4C30CP07LHM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2473L | 0In Stock | Vishay | Through Hole | TO-247AD-3 | Common Cathode | 16 A | 650 V | 1.3 V | 101 A | 94 uA | - 55 C | + 175 C | VS-4C30CP07LHM3 | Tube | ||||
Mfr: VS-4C08ET07S2LHM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SiCG4D2PAK2L | 0In Stock | Vishay | SMD/SMT | TO-263AB-2 | Single | 8 A | 650 V | 1.3 V | 51 A | 41 uA | - 55 C | + 175 C | 4C08ET07S2LHM3 | Reel | ||||
Mfr: VS-4C15ET12S2LHM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SiCG4D2PAK2L | 0In Stock | Vishay | SMD/SMT | TO-263AB-2 | Single | 15 A | 1.2 kV | 1.36 V | 75 A | 200 uA | - 55 C | + 175 C | VS-4C15ET12S2LHM3 | Reel | ||||
Mfr: VS-4C16EP07LHM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2472L | 0In Stock | Vishay | Through Hole | TO-247AD-2 | Single | 16 A | 650 V | 1.3 V | 101 A | 94 uA | - 55 C | + 175 C | VS-4C16EP07LHM3 | Tube | ||||
Mfr: VS-4C20EP07L-M3 TTI: Not Assigned Vishay Availability: 0In StockSiC Schottky Diodes Rectifier, Silicon Carbide, 650V, 20A, Gen 4, single, TO-247AD 2L | 0In Stock | Vishay | Through Hole | TO-247AD-2 | Single | 20 A | 650 V | 1.33 V | 125 A | 4.5 uA | - 55 C | + 175 C | VS-4C20EP07L-M3 | Tube | ||||
Mfr: VS-4C10ET07THM3 TTI: Not Assigned Vishay Availability: 0In StockSiC Schottky Diodes Rectifier, Silicon Carbide, 650V, 10A, Gen 4, single, TO-220AC 2L, auto-grade | 0In Stock | Vishay | Through Hole | TO-220AC-2 | Single | 10 A | 650 V | 1.3 V | 60 A | 2 uA | - 55 C | + 175 C | VS-4C10ET07THM3 | Tube | ||||
Mfr: LSIC2SD120E20CC TTI: Not Assigned Littelfuse Availability: Not Available OnlineSiC Schottky Diodes 1200V 20A TO-247-3L SiC Schottky Diode | Not Available Online | Littelfuse | Through Hole | TO-247-3 | Dual | 56 A | 1.2 kV | 1.5 V | 80 A | 1 uA | - 55 C | + 175 C | LSIC2SD | Tube |
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