SiC Schottky Diodes
452 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Configuration | If - Forward Current | Vrrm - Repetitive Reverse Voltage | Vf - Forward Voltage | Ifsm - Forward Surge Current | Ir - Reverse Current | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Littelfuse | Through Hole | TO-247-2 | Single | 31 A | 1.7 kV | 1.5 V | 72 A | 1 uA | - 55 C | + 175 C | LSIC2SD170Bx | Tube | |||||
Mfr: VS-4C15EP12L-M3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2472L | 0In Stock | Vishay | Through Hole | TO-247AD-2 | Single | 15 A | 1.2 kV | 1.36 V | 75 A | 200 uA | - 55 C | + 175 C | VS-4C15EP12L-M3 | Tube | ||||
Mfr: VS-4C16ET07THM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2202L | 0In Stock | Vishay | Through Hole | TO-220AC-2 | Single | 16 A | 650 V | 1.3 V | 101 A | 94 uA | - 55 C | + 175 C | VS-4C16ET07THM3 | Tube | ||||
0In Stock | Toshiba | Through Hole | TO-247-3 | Common Cathode | 102 A | 1.2 kV | 1.27 V | 2.16 kA | 1.8 uA | + 175 C | ||||||||
Mfr: VS-C04ET07T-M3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes Si CARBIDE DIODE | 0In Stock | Vishay | Through Hole | TO-220AC-2 | Single | 4 A | 650 V | 1.7 V | 26 A | 25 uA | - 55 C | + 175 C | Tube | |||||
Mfr: VS-C10ET07T-M3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes Si CARBIDE DIODE | 0In Stock | Vishay | Through Hole | TO-220AC-2 | Single | 10 A | 650 V | 1.8 V | 68 A | 55 uA | - 55 C | + 175 C | Tube | |||||
0In Stock | Littelfuse | LSIC2SD | Reel | |||||||||||||||
Mfr: VS-4C20EP07LHM3 TTI: Not Assigned Vishay Availability: 0In StockSiC Schottky Diodes Rectifier, Silicon Carbide, 650V, 20A, Gen 4, single, TO-247AD 2L, auto-grade | 0In Stock | Vishay | Through Hole | TO-247AD-2 | Single | 20 A | 650 V | 1.33 V | 125 A | 4.5 uA | - 55 C | + 175 C | VS-4C20EP07LHM3 | Tube | ||||
Mfr: VS-4C10ET07S2LHM3 TTI: Not Assigned Vishay Availability: 0In StockSiC Schottky Diodes Rectifier, Silicon Carbide, 650V, 10A, Gen 4, single, D2PAK 2L (TO-263AB 2L), auto-grade | 0In Stock | Vishay | SMD/SMT | TO-263AB-2 | Single | 10 A | 650 V | 1.3 V | 60 A | 2 uA | - 55 C | + 175 C | VS-4C10ET07S2LHM3 | Reel | ||||
0In Stock | Littelfuse | SMD/SMT | D2PAK-2 (TO-263-2) | Single | 20 A | 650 V | 1.8 V | 95 A | 100 uA | - 55 C | + 175 C | LSIC2SD | AEC-Q101 | Reel | ||||
Mfr: TRS10E65H,S1Q TTI: Not Assigned Toshiba Availability: 0In StockSiC Schottky Diodes G3 SiC-SBD 650V 10A TO-220-2L | 0In Stock | Toshiba | Through Hole | TO-220-2L | 10 A | 650 V | 1.2 V | 510 A | 2 uA | Tube | ||||||||
Mfr: VS-4C16ET07T-M3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2202L | 0In Stock | Vishay | Through Hole | TO-220AC-2 | Single | 16 A | 650 V | 1.3 V | 101 A | 94 uA | - 55 C | + 175 C | VS-4C16ET07T-M3 | Tube | ||||
Mfr: VS-4C20ET07S2L-M3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SiCG4D2PAK2L | 0In Stock | Vishay | SMD/SMT | TO-263AB-2 | Single | 20 A | 650 V | 1.33 V | 125 A | 110 uA | - 55 C | + 175 C | VS-4C20ET07S2L-M3 | Reel | ||||
0In Stock | Toshiba | Through Hole | TO-220F-2L | Single | 6 A | 650 V | 1.45 V | 52 A | 300 nA | + 175 C | Tube | TRS6A65F,S1Q(S2 | ||||||
0In Stock | Toshiba | Through Hole | TO-247-3 | Dual Anode Common Cathode | 16 A | 650 V | 1.6 V | 130 A | 400 nA | + 175 C | Tube | |||||||
Mfr: BSDD06G65E2 TTI: Not Assigned Bourns Availability: 0In StockSiC Schottky Diodes 650V 6A High Surge SiC diode in TO252 | 0In Stock | Bourns | SMD/SMT | TO-252-3 | Single | 6 A | 650 V | 1.45 V | 36 A | 300 nA | - 55 C | + 175 C | BSD | Reel | ||||
0In Stock | Toshiba | Through Hole | TO-220-2 | Single | 8 A | 650 V | 1.45 V | 69 A | 400 nA | + 175 C | Tube | TRS8E65F,S1Q(S | ||||||
Mfr: VS-4C30ET07THM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2202L | 0In Stock | Vishay | Through Hole | TO-220AC-2 | SIngle | 30 A | 650 V | 1.33 V | 180 A | 125 uA | - 55 C | + 175 C | VS-4C30ET07THM3 | Tube | ||||
Mfr: VS-4C10EP12LHM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2472L | 0In Stock | Vishay | Through Hole | TO-247AD-2 | Single | 10 A | 1.2 kV | 1.34 V | 50 A | 162 uA | - 55 C | + 175 C | VS-4C10EP12LHM3 | Tube | ||||
Mfr: TRS8V65H,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC Schottky Diodes G3 SiC-SBD 650V 8A DFN8x8 | 0In Stock | Toshiba | SMD/SMT | DFN-8 | 8 A | 650 V | 1.2 V | 410 A | 2 uA | Reel | ||||||||
Mfr: VS-4C15EP12LHM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2472L | 0In Stock | Vishay | Through Hole | TO-247AD-2 | Single | 15 A | 1.2 kV | 1.36 V | 75 A | 200 uA | - 55 C | + 175 C | VS-4C15EP12LHM3 | Tube | ||||
Mfr: VS-4C30ET12THM3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC Schottky Diodes SicG4TO-2202L | 0In Stock | Vishay | Through Hole | TO-220AC-2 | Single | 30 A | 1.2 kV | 1.36 V | 144 A | 550 uA | - 55 C | + 175 C | VS-4C30ET12THM3 | Tube | ||||
Mfr: VS-4C10ET07S2L-M3 TTI: Not Assigned Vishay Availability: 0In StockSiC Schottky Diodes Rectifier, Silicon Carbide, 650V, 10A, Gen 4, single, D2PAK 2L (TO-263AB 2L) | 0In Stock | Vishay | SMD/SMT | TO-263AB-2 | Single | 10 A | 650 V | 1.3 V | 60 A | 2 uA | - 55 C | + 175 C | VS-4C10ET07S2L-M3 | Reel | ||||
Mfr: VS-4C60CP07LHM3 TTI: Not Assigned Vishay Availability: 0In StockSiC Schottky Diodes Rectifier, Silicon Carbide, 650V, 2x30A, Gen 4, dual, common-cathode, TO-247AD 3L, auto-grade | 0In Stock | Vishay | Through Hole | TO-247AD-3 | Common Cathode | 30 A | 650 V | 1.33 V | 180 A | 7 uA | - 55 C | + 175 C | VS-4C60CP07LHM3 | Tube | ||||
0In Stock | Toshiba | Through Hole | TO-247-3 | Common Anode | 64 A | 1.2 kV | 1.27 V | 1.38 kA | 1 uA | - 55 C | + 175 C | Tube |
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