BSD - SiC Schottky Diodes
11 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Configuration | If - Forward Current | Vrrm - Repetitive Reverse Voltage | Vf - Forward Voltage | Ifsm - Forward Surge Current | Ir - Reverse Current | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
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Mfr: BSDV10G120E2 TTI: BSDV10G120E2 Bourns Availability: 0In StockSiC Schottky Diodes 1200V 10A High Surge SiC schottky diode in TO247-2 | 0In Stock | Bourns | BSD | Tube | |||||||||||||
Mfr: BSDH06G65E2 TTI: BSDH06G65E2 Bourns Availability: 0In StockSiC Schottky Diodes 650V 6A High Surge SiC schottky diode in TO220-2 | 0In Stock | Bourns | Through Hole | TO-220-2 | Single | 10 A | 650 V | 1.45 V | 60 A | 500 nA | - 55 C | + 175 C | BSD | Tube | |||
Mfr: BSDD06G65E2 TTI: Not Assigned Bourns Availability: 0In StockSiC Schottky Diodes 650V 6A High Surge SiC diode in TO252 | 0In Stock | Bourns | SMD/SMT | TO-252-3 | Single | 6 A | 650 V | 1.45 V | 36 A | 300 nA | - 55 C | + 175 C | BSD | Reel | |||
Mfr: BSDH10S65E6 TTI: BSDH10S65E6 Bourns Availability: 0In StockSiC Schottky Diodes 650V 10A Low Vf SiC schottky diode in TO220-2 | 0In Stock | Bourns | Through Hole | TO-220-2 | Single | 10 A | 650 V | 1.45 V | 60 A | 500 nA | - 55 C | + 175 C | BSD | Tube | |||
Mfr: BSDW20G65C2 TTI: BSDW20G65C2 Bourns Availability: 0In StockSiC Schottky Diodes 650V each 10A High Surge Dual SiC schottky diode in TO247-3 | 0In Stock | Bourns | Through Hole | TO-247-3 | Single | 20 A | 1.2 kV | 1.42 V | 60 A | 1 uA | - 55 C | + 175 C | BSD | Tube | |||
Mfr: BSDH08G65E2 TTI: BSDH08G65E2 Bourns Availability: 0In StockSiC Schottky Diodes 650V 8A High Surge SiC schottky diode in TO220-2 | 0In Stock | Bourns | Through Hole | TO-220-2 | Single | 10 A | 650 V | 1.45 V | 60 A | 500 nA | - 55 C | + 175 C | BSD | Tube | |||
Mfr: BSDH10G65E2 TTI: Not Assigned Bourns Availability: 0In StockSiC Schottky Diodes 650V 10A High Surge SiC diode in TO220-2 | 0In Stock | Bourns | Through Hole | TO-220-2 | Single | 10 A | 650 V | 1.45 V | 60 A | 500 nA | - 55 C | + 175 C | BSD | Tube | |||
Mfr: BSDH10G120E2 TTI: Not Assigned Bourns Availability: 0In StockSiC Schottky Diodes 1200V 10A High Surge SiC diode in TO220-2 | 0In Stock | Bourns | Through Hole | TO-220-2 | Single | 10 A | 1.2 kV | 1.42 V | 80 A | 1 uA | - 55 C | + 175 C | BSD | Tube | |||
Mfr: BSDL10S65E6 TTI: Not Assigned Bourns Availability: 0In StockSiC Schottky Diodes 650V 10A Low Vf SiC schottky diode in DFN8x8 | 0In Stock | Bourns | SMD/SMT | DFN-4 | Single | 10 A | 650 V | 1.29 V | 75 A | 1 uA | - 55 C | + 175 C | BSD | Reel | |||
Mfr: BSDW20G120C2 TTI: Not Assigned Bourns Availability: 0In StockSiC Schottky Diodes 1200V each 10A High Surge Dual SiC diode in TO247-3 | 0In Stock | Bourns | Through Hole | TO-247-3 | Single | 20 A | 1.2 kV | 1.42 V | 80 A | 1 uA | - 55 C | + 175 C | BSD | Tube | |||
Mfr: BSDW20S65C6 TTI: Not Assigned Bourns Availability: 0In StockSiC Schottky Diodes 650V each 10A Low Vf Dual SiC schottky diode in TO247-3 | 0In Stock | Bourns | Through Hole | TO-247-3 | Single | 20 A | 650 V | 1.29 V | 85 A | 1 uA | - 55 C | + 175 C | BSD | Tube |