IXFN100N50 - MOSFET Modules
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | IXYS | Si | Screw Mount | SOT-227-4 | N-Channel | 1 Channel | 500 V | 90 A | 49 mOhms | - 30 V, + 30 V | - 55 C | + 150 C | 1.04 mW | IXFN100N50 | Tube | ||||
Mfr: IXFN100N50Q3 TTI: IXFN100N50Q3 IXYS Availability: 0In StockMOSFET Modules Q3Class HiPerFET Pwr MOSFET 500V/82A | 0In Stock | IXYS | Si | Screw Mount | SOT-227-4 | N-Channel | 1 Channel | 500 V | 82 A | 49 mOhms | - 30 V, + 30 V | - 55 C | + 150 C | 960 W | IXFN100N50 | Tube |