IXFN20N120 - MOSFET Modules
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | IXYS | Si | Screw Mount | SOT-227-4 | N-Channel | 1 Channel | 1.2 kV | 20 A | 570 mOhms | - 30 V, + 30 V | 6.5 V | - 55 C | + 150 C | 595 W | IXFN20N120 | Tube | |||
Mfr: IXFN20N120 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFET Modules 20 Amps 1200 V 0.75 Ohms Rds | Not Available Online | IXYS | Si | Screw Mount | SOT-227-4 | N-Channel | 1 Channel | 1.2 kV | 20 A | 750 mOhms | - 30 V, + 30 V | - 55 C | + 150 C | 780 W | IXFN20N120 | Tube |