IXFN80N60 - MOSFET Modules
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Series | Packaging |
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Mfr: IXFN80N60P3 TTI: IXFN80N60P3 IXYS Availability: 0In StockMOSFET Modules Polar3 HiPerFET Power MOSFET | 0In Stock | IXYS | Si | Screw Mount | SOT-227-4 | N-Channel | 1 Channel | 600 V | 66 A | 70 mOhms | - 30 V, + 30 V | - 55 C | + 150 C | 960 W | IXFN80N60 | Tube |