HN7G06 - Bipolar Transistors - BJT
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
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Mfr: HN7G06FU-A(TE85L,F TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT Vceo=-12V Vceo=50V 47K x 47Kohms | Not Available Online | Si | SMD/SMT | ES6-6 | PNP | Dual | 12 V | 15 V | 5 V | 200 mW | 130 MHz | HN7G06 | Reel | |||||||
Mfr: HN7G06FE-A(TE85L,F TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT Vceo=-12V Vceo=50V Ic=-400mA IC=100mA | Not Available Online | Si | SMD/SMT | SOT-563-6 | NPN, PNP | Dual | 50 V, 12 V | HN7G06 | Reel |