IGBTs
1.264 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | D2PAK-3 (TO-263-3) | SMD/SMT | Single | 650 V | 2.27 V | - 20 V, 20 V | 50 A | 230 W | - 55 C | + 175 C | Tube | |||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 600 V | 1.8 V | - 20 V, 20 V | 120 A | 600 W | - 55 C | + 175 C | IXXH50N60 | Tube | ||||
0In Stock | Si | D3PAK-3 (TO-268-3) | SMD/SMT | Single | 1.2 kV | 2.35 V | 20 V | 75 A | 300 W | - 55 C | + 150 C | IXGT32N120 | Tube | ||||
0In Stock | Si | TO-247-PLUS-HV-3 | Through Hole | Single | 2.5 kV | 4 V | - 20 V, 20 V | 95 A | 937 W | - 55 C | + 175 C | High Voltage | Tube | ||||
0In Stock | Si | TO-264-3 | Through Hole | Single | 1.7 kV | 3 V | - 20 V, 20 V | 170 A | 830 W | - 55 C | + 150 C | IXGK100N170 | Tube | ||||
0In Stock | Si | Through Hole | Single | 650 V | 2.5 V | - 20 V, 20 V | 38 A | 200 W | - 55 C | + 175 C | Planar | Tube | |||||
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 1.7 kV | 7 V | 20 V | 5.5 A | 50 W | - 55 C | + 150 C | IXGR6N170 | Tube | ||||
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 650 V | 2.35 V | - 20 V, 20 V | 235 A | 880 W | - 55 C | + 175 C | Trench | Tube | ||||
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 1.7 kV | 4 V | - 20 V, 20 V | 12 A | 75 W | - 55 C | + 150 C | IXGH6N170 | Tube | ||||
0In Stock | Si | D3PAK-3 (TO-268-3) | SMD/SMT | Single | 1.7 kV | 5 V | - 20 V, 20 V | 16 A | 190 W | - 55 C | + 150 C | IXGT16N170 | Tube | ||||
0In Stock | Si | D3PAK-3 (TO-268-3) | SMD/SMT | Single | 1.7 kV | 4 V | - 20 V, 20 V | - 55 C | + 150 C | IXGT32N170 | Tube | ||||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 1.2 kV | 2.1 V | - 20 V, 20 V | 126 A | 650 W | - 55 C | + 175 C | Tube | |||||
Mfr: VS-GT75YF120UT TTI: VS-GT75YF120UT Vishay Semiconductors Availability: 0In StockIGBTs 75A 1200V IGBT ECONO 2 | 0In Stock | Si | Screw Mount | Single | 1.2 kV | 2.2 V | - 20 V, 20 V | 118 A | 431 W | - 40 C | + 150 C | Bulk | |||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 1.7 kV | 4.1 V | - 20 V, 20 V | 36 A | 280 W | - 55 C | + 175 C | Tube | |||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 1.7 kV | 4 V | - 20 V, 20 V | 58 A | 500 W | - 55 C | + 175 C | Tube | |||||
Mfr: IXGH28N60B3D1 TTI: IXGH28N60B3D1 IXYS Availability: 0In StockIGBTs 600V, 28A at 110degreeC , TO-247AD-3 | 0In Stock | Si | TO-247AD-3 | Through Hole | Single | 600 V | 1.8 V | - 20 V, 20 V | 28 A | 190 W | - 55 C | + 150 C | IXGH28N60 | Tube | |||
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 650 V | 2.1 V | - 20 V, 20 V | 160 A | 625 W | - 55 C | + 175 C | Trench | Tube | ||||
0In Stock | Si | D3PAK-3 (TO-268-3) | SMD/SMT | Single | 1.7 kV | 2.8 V | - 20 V, 20 V | 80 A | 360 W | - 55 C | + 150 C | IXBT42N170 | Tube | ||||
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 600 V | 1.8 V | - 20 V, 20 V | 92 A | 250 W | - 55 C | + 150 C | IXGH36N60 | Tube | ||||
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 1.2 kV | 3.3 V | - 20 V, 20 V | 75 A | 500 W | - 55 C | + 150 C | IXYH30N120 | Tube | ||||
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 650 V | 1.5 V | - 20 V, 20 V | 120 A | 455 W | - 55 C | + 175 C | Trench | Tube | ||||
0In Stock | Si | TO-247AD-3 | Through Hole | Single | Planar | Tube | |||||||||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 3 kV | 3.2 V | - 20 V, 20 V | 50 A | 250 W | - 55 C | + 150 C | Very High Voltage | Tube | ||||
0In Stock | Si | TO-220-3 | Through Hole | Single | 600 V | 1.18 V | - 20 V, 20 V | 120 A | 300 W | - 55 C | + 150 C | Tube | |||||
0In Stock | Si | Screw Mount | Single | 1.2 kV | 2.17 V | - 20 V, 20 V | 169 A | 781 W | - 40 C | + 150 C | Bulk |