IXTN550N055 - MOSFET Modules
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Series | Packaging |
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Mfr: IXTN550N055T2 TTI: IXTN550N055T2 IXYS Availability: 0In StockMOSFET Modules GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | IXYS | Si | Screw Mount | SOT-227-4 | N-Channel | 1 Channel | 55 V | 550 A | 1.3 mOhms | - 20 V, + 20 V | 4 V | - 55 C | + 175 C | 940 W | IXTN550N055 | Tube |