Littelfuse - MOSFETs
2.424 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 500 V | 20 A | 450 mOhms | 20 V | 2 V | 103 nC | - 55 C | + 150 C | 460 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 250 V | 90 A | 33 mOhms | 20 V | 4.5 V | 640 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 40 mOhms | 20 V | 3 V | 150 nC | - 55 C | + 150 C | Enhancement | CoolMOS | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 160 A | 5.8 mOhms | 30 V | 2.5 V | 132 nC | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 86 A | 29 mOhms | 30 V | 5 V | 90 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 15 A | 760 mOhms | 30 V | 6.5 V | 97 nC | - 55 C | + 150 C | 543 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 10.5 Ohms | 20 V | 4.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 86 A | 29 mOhms | 30 V | - 55 C | + 175 C | 480 W | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | 20 V | 4 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
Mfr: IXTH26P20P TTI: IXTH26P20P IXYS Availability: Not Available OnlineMOSFETs -26.0 Amps -200V 0.170 Rds | Not Available Online | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 26 A | 170 mOhms | 20 V | 4 V | 56 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | 20 V | 4 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 90 A | 25 mOhms | 20 V | 2 V | 120 nC | - 55 C | + 150 C | 462 W | Enhancement | Tube | |||||
Mfr: IXFK100N65X2 TTI: IXFK100N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/100A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 650 V | 100 A | 30 mOhms | 30 V | 2.7 V | 180 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFH20N85X TTI: IXFH20N85X IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 850 V | 20 A | 330 mOhms | 30 V | 3.5 V | 63 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFK50N85X TTI: IXFK50N85X IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 850 V | 50 A | 105 mOhms | 30 V | 3.5 V | 152 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 94 A | 55 mOhms | 30 V | 3 V | 228 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH6N120P TTI: IXFH6N120P IXYS Availability: 0In StockMOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | 30 V | 5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 800 mA | 4.6 Ohms | 20 V | 4.5 V | 12.7 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 3 A | 6 Ohms | 20 V | 4.5 V | 37.5 nC | - 55 C | + 150 C | 125 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 800 mA | 4.6 Ohms | 20 V | 2.5 V | 12.7 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.6 A | 10 Ohms | 20 V | 4.5 V | 27 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 60 A | 45 mOhms | 20 V | 2.5 V | 255 nC | - 55 C | + 150 C | 540 W | Enhancement | Tube | |||||
Mfr: IXTH1N200P3HV TTI: IXTH1N200P3HV IXYS Availability: 0In StockMOSFETs 2000V/1A HV Power MOSFET, TO-247HV | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 2 kV | 1 A | 40 Ohms | 20 V | 2 V | 23.5 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 3 kV | 1 A | 50 Ohms | 20 V | 2 V | 30.6 nC | - 55 C | + 150 C | 195 W | Enhancement | Tube |