Littelfuse - MOSFETs
2.423 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 200 V | 94 A | 10.6 mOhms | - 20 V, 20 V | 4.5 V | 77 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | |||||
Mfr: IXFH80N65X2 TTI: IXFH80N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/80A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 80 A | 40 mOhms | - 30 V, 30 V | 2.7 V | 143 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 3 kV | 1 A | 50 Ohms | - 20 V, 20 V | 2 V | 30.6 nC | - 55 C | + 150 C | 195 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 360 mOhms | - 30 V, 30 V | 3 V | 29 nC | - 55 C | + 150 C | 330 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 250 V | 50 A | 60 mOhms | - 30 V, 30 V | 5 V | 78 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 210 A | 7.5 mOhms | - 15 V, 15 V | 4.5 V | 740 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 16 A | 360 mOhms | - 30 V, 30 V | 3 V | 29 nC | - 55 C | + 150 C | 330 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 300 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 380 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 20 A | 570 mOhms | - 30 V, 30 V | 6.5 V | 126 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 55 V | 360 A | 2.4 mOhms | - 20 V, 20 V | 2 V | 330 nC | - 55 C | + 175 C | 935 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFT60N50P3 TTI: IXFT60N50P3 IXYS Availability: 0In StockMOSFETs 500V 60A 0.1Ohm PolarP3 Power MOSFET | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 60 A | 100 mOhms | - 30 V, 30 V | 5 V | 96 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFX98N50P3 TTI: IXFX98N50P3 IXYS Availability: 0In StockMOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 98 A | 50 mOhms | - 30 V, 30 V | 5 V | 197 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFH160N15T2 TTI: IXFH160N15T2 IXYS Availability: 0In StockMOSFETs Trench T2 HiperFET Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 160 A | 9 mOhms | - 20 V, 20 V | 4.5 V | 253 nC | - 55 C | + 175 C | 880 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 70 A | 52 mOhms | - 30 V, 30 V | 5 V | 240 nC | - 55 C | + 150 C | 625 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 80 A | 65 mOhms | - 30 V, 30 V | 3 V | 197 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 102 A | 18 mOhms | - 20 V, 20 V | 5 V | 87 nC | - 55 C | + 175 C | 455 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 2.4 A | 7.5 Ohms | - 20 V, 20 V | 2.5 V | 37 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 2 A | 7.5 Ohms | - 20 V, 20 V | 2.5 V | 24.3 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 69 A | 49 mOhms | - 20 V, 20 V | 2.5 V | 180 nC | - 55 C | + 150 C | 500 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 400 mOhms | - 30 V, 30 V | 5.5 V | 43 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 30 V, 30 V | 5 V | 82 nC | - 55 C | + 150 C | 540 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 24 A | 150 mOhms | - 20 V, 20 V | 5 V | 150 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
Mfr: IXTH75N10L2 TTI: IXTH75N10L2 IXYS Availability: 0In StockMOSFETs LinearL2 Powr MOSFET w/extended FBSOA | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 75 A | 21 mOhms | - 20 V, 20 V | 2.5 V | 215 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 32 A | 150 mOhms | - 30 V, 30 V | 3 V | 150 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 80 A | 13 mOhms | - 20 V, 20 V | 2.5 V | 83 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube |
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