Littelfuse - MOSFETs
2.423 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 500 V | 2 A | 4.2 Ohms | - 20 V, 20 V | 4.5 V | 11.9 nC | - 55 C | + 150 C | 58 W | Enhancement | AEC-Q101 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 16 A | 300 mOhms | - 20 V, 20 V | 4 V | 199 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | - 15 V, 15 V | 4 V | 175 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-5 | N-Channel | 1 Channel | 75 V | 120 A | 5.8 mOhms | - 30 V, 30 V | 2 V | 178 nC | - 55 C | + 175 C | 170 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 3.5 A | 2.5 Ohms | - 30 V, 30 V | 3 V | 7 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | - 20 V, 20 V | 2.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 120 V | 80 A | 17 mOhms | - 20 V, 20 V | 2.5 V | 80 nC | - 55 C | + 175 C | 325 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 50 A | 60 mOhms | - 30 V, 30 V | 3 V | 78 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 2 A | 7.5 Ohms | - 20 V, 20 V | 2.5 V | 24.3 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | |||||
Mfr: IXFH42N60P3 TTI: IXFH42N60P3 IXYS Availability: 0In StockMOSFETs 600V 42A 0.185Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 42 A | 185 mOhms | - 30 V, 30 V | 5 V | 78 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 102 A | 33 mOhms | - 20 V, 20 V | 5 V | 224 nC | - 55 C | + 150 C | 700 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 600 V | 10 A | 1 Ohms | - 20 V, 20 V | 3 V | 135 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 18 A | 600 mOhms | - 30 V, 30 V | 6 V | 97 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 700 mA | 15 Ohms | - 30 V, 30 V | 4.5 V | 7.8 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 220 A | 3.5 mOhms | - 20 V, 20 V | 2 V | 112 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 65 V | 28 A | 45 mOhms | - 15 V, 15 V | 2.5 V | 46 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 150 V | 36 A | 110 mOhms | - 20 V, 20 V | 4.5 V | 55 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1.5 kV | 8 A | 3.6 Ohms | - 30 V, 30 V | 8 V | 250 nC | - 55 C | + 150 C | 700 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 75 A | 25 mOhms | - 20 V, 20 V | 3 V | 74 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 150 V | 150 A | 13 mOhms | - 20 V, 20 V | 5 V | 190 nC | - 55 C | + 175 C | 714 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 36 A | 105 mOhms | - 30 V, 30 V | 3 V | 200 nC | - 55 C | + 150 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 76 A | 39 mOhms | - 30 V, 30 V | 3 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 800 mA | 20 Ohms | - 20 V, 20 V | 2 V | 11.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 250 V | 100 A | 27 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 120 A | 24 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 175 C | 700 W | Enhancement | PolarHT | Tube |
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