Littelfuse - MOSFETs
2.422 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 200 V | 72 A | 33 mOhms | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | Clare | Reel | ||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | HiPerFET | Tube | ||||||||||||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | Clare | Reel | ||||||||||||||
Not Available Online | Si | HiPerFET | Tube | ||||||||||||||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 24 A | 450 mOhms | 20 V | - 55 C | + 150 C | 500 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 90 A | 22 mOhms | 20 V | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 65 V | 130 A | 6.6 mOhms | 20 V | 2 V | 79 nC | - 55 C | + 175 C | 250 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTH60N20X4 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 200V, 60A current capacity, Ultra junction X4, TO-247 package, MOSFET | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 60 A | 21 mOhms | 20 V | 4.5 V | 11 nC | - 55 C | + 175 C | 250 W | Enhancement | X4-Class | Tube | |||
0In Stock | Si | Reel | |||||||||||||||||||
Mfr: IXTP120N20X4 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs 200V, 120A, Ultra junction X4, TO-220 package, MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 120 A | 9.5 mOhms | 20 V | 2.5 V | 108 nC | - 55 C | + 175 C | 417 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 220 A | 4 mOhms | 20 V | 2 V | 136 nC | - 55 C | + 175 C | 440 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Reel | |||||||||||||||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 24 A | 165 mOhms | 20 V | 2.5 V | 52 nC | - 55 C | + 150 C | 250 W | Enhancement | CoolMOS | Tube | ||||
Mfr: IXFR21N100Q TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 18 Amps 1000V 0.5 Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 18 A | 500 mOhms | 20 V | - 55 C | + 150 C | 350 W | Enhancement | HiPerFET | Tube | |||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 88 A | 22 mOhms | 20 V | 4 V | 170 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 270 A | 2.2 mOhms | 15 V | 2 V | 182 nC | - 55 C | + 175 C | 375 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 60 A | 55 mOhms | 30 V | 2.5 V | 143 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 10 A | 1.2 Ohms | 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 90 A | 38 mOhms | 30 V | 2.5 V | 210 nC | - 55 C | + 150 C | 1.1 kW | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 800 V | 14 A | 700 mOhms | 30 V | 3 V | 61 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 700 V | 2 A | 850 mOhms | 30 V | 2.5 V | 11.8 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 150 V | 102 A | 18 mOhms | 20 V | - 55 C | + 175 C | 455 W | Enhancement | HiPerFET | Bulk | ||||||
0In Stock | Si | Through Hole | TO-247-3 | 1.2 kV | 12 A | 1 Ohms | Tube | ||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 300 V | 54 A | 72 Ohms | Tube |
