Littelfuse - MOSFETs
2.423 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFP34N65X2W TTI: Not Assigned IXYS Availability: 0In StockMOSFETs 650V 100mohm 34A X2-Class HiPerFET in TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 34 A | 100 mOhms | 30 V | 5 V | 64 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 130 A | 12 mOhms | HiPerFET | Bulk | |||||||||||
0In Stock | Si | SMD/SMT | TO-268-3 | N-Channel | 1 Channel | 800 V | 20 A | 520 mOhms | - 30 V, 30 V | 5 V | 86 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 20 A | 210 mOhms | - 30 V, 30 V | 3 V | 35 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 32 A | 135 mOhms | - 30 V, 30 V | 3 V | 54 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 52 A | 68 mOhms | - 30 V, 30 V | 3 V | 113 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | - 55 C | + 150 C | Tube | ||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 250 V | 102 A | 29 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 300 V | 44 A | 85 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 250 V | 62 A | 50 Ohms | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | TO-268-3 | P-Channel | 1 Channel | 100 V | 36 A | 75 mOhms | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 20 V | 27 A | 100 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | HiPerFET | Tube | ||||||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 600 V | 7 A | 1.15 Ohms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | TO-268-3 | Tube | |||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 220 A | 5.5 mOhms | - 20 V, 20 V | 4.5 V | 157 nC | - 55 C | + 175 C | 800 W | Enhancement | Tube | |||||
Mfr: IXTA60N20X4 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs 200V, 60A current capacity, Ultra junction X4, TO-263 package, MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 200 V | 60 A | 21 mOhms | - 20 V, 20 V | 4.5 V | 11 nC | - 55 C | + 175 C | 250 W | Enhancement | X4-Class | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 12 A | 1.05 Ohms | - 20 V, 20 V | 5.5 V | 77 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-268-3 | HiPerFET | Tube | ||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 200 V | 72 A | 33 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 44 A | 85 Ohms | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 200 V | 72 A | 33 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 40 V | 230 A | 2.9 mOhms | - 15 V, 15 V | 2 V | - 55 C | + 175 C | 340 W | HiPerFET | Tube | |||||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-268-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | Tube |
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