Littelfuse - MOSFETs
2.424 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IXFX64N60P3 TTI: IXFX64N60P3 IXYS Availability: 0In StockMOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 64 A | 95 mOhms | 30 V | 5 V | 145 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 120 A | 22 mOhms | 20 V | 5 V | 152 nC | - 55 C | + 175 C | 714 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 100 A | 27 mOhms | 20 V | 5 V | 185 nC | - 55 C | + 150 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 400 mOhms | 30 V | 3 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | 20 V | 2.5 V | 104 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | 30 V | 3 V | 65 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | 30 V | 5 V | 85 nC | - 55 C | + 150 C | 540 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 3.5 A | 3 Ohms | 30 V | 3 V | 14.2 nC | - 55 C | + 150 C | 100 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 100 mA | 80 Ohms | 20 V | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1.2 A | 13 Ohms | 20 V | 2.5 V | 15.5 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1.2 kV | 26 A | 500 mOhms | 30 V | 6.5 V | 255 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 32 A | 320 mOhms | 30 V | 6.5 V | 225 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1.2 kV | 30 A | 350 mOhms | 30 V | 6.5 V | 310 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 16 A | 950 mOhms | 30 V | 3.5 V | 120 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 3 A | 4.8 Ohms | 20 V | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 200 A | 7.5 mOhms | 20 V | 5 V | 235 nC | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 96 A | 24 mOhms | 20 V | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | 20 V | 5 V | 39 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 64 A | 85 mOhms | 30 V | 3 V | 150 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 600 V | 82 A | 75 mOhms | 30 V | 5 V | 240 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 13 A | 420 mOhms | 30 V | 5 V | 105 nC | - 55 C | + 150 C | 208 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 250 V | 100 A | 27 mOhms | 20 V | 5 V | 185 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube |