Littelfuse - MOSFETs
2.422 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 36 A | 190 mOhms | 30 V | 3 V | 102 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 20 A | 185 mOhms | 30 V | 2.5 V | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | 20 V | 5 V | 150 nC | - 55 C | + 175 C | 600 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 74 A | 34 mOhms | 20 V | 5 V | 107 nC | - 55 C | + 175 C | 480 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 26 A | 130 mOhms | 30 V | 5 V | 45 nC | - 55 C | + 150 C | 460 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 850 V | 30 A | 220 mOhms | 30 V | 3.5 V | 68 nC | - 55 C | + 150 C | 695 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 250 V | 64 A | 49 mOhms | 20 V | 5 V | 105 nC | - 55 C | + 150 C | 400 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 600 V | 48 A | 76 mOhms | 30 V | 5 V | 190 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 12 A | 310 mOhms | 30 V | 3 V | 18.5 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 650 V | 80 A | 38 mOhms | 30 V | 2.7 V | 140 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTK600N04T2 TTI: IXTK600N04T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 40 V | 600 A | 1.5 mOhms | 20 V | 1.5 V | 590 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 27 A | 320 mOhms | 20 V | 4.5 V | 170 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 75 V | 170 A | 5.4 mOhms | 20 V | 2 V | 109 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 140 A | 9.6 mOhms | 20 V | 2.5 V | 127 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 120 A | 22 mOhms | 20 V | 5 V | 152 nC | - 55 C | + 175 C | 714 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 600 V | 36 A | 190 mOhms | 30 V | 5 V | 102 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 60 A | 40 mOhms | HiPerFET | Tube | |||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 18 A | 200 mOhms | 30 V | 3 V | 29 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTA1R4N100PTRL TTI: IXTA1R4N100PTRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 1000V TO263D2 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11.8 Ohms | 20 V | 2.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Polar | Reel | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 220 A | 6.2 mOhms | 20 V | 2.5 V | 204 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 26 A | 90 mOhms | 15 V | 4.5 V | 52 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 13 Ohms | 20 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 200 A | 7.5 mOhms | 20 V | 2.5 V | 235 nC | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube |