IXYS - MOSFETs
2.318 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 18 A | 120 mOhms | 15 V | 4.5 V | 39 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 500 V | 20 A | 450 mOhms | 20 V | 2 V | 103 nC | - 55 C | + 150 C | 460 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 250 V | 90 A | 33 mOhms | 20 V | 4.5 V | 640 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | ||||
Mfr: IXFH80N25X3 TTI: IXFH80N25X3 IXYS Availability: 0In StockMOSFETs 250V/80A Ultra Junct ion X3-Class MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 80 A | 16 mOhms | 20 V | 2.5 V | 83 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 750 mA | 17 Ohms | 30 V | 2.5 V | 7.8 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 15 A | 480 mOhms | 20 V | 2.5 V | 123 nC | - 55 C | + 150 C | 300 W | Enhancement | Linear L2 | Tube | ||||
Mfr: IXFK50N85X TTI: IXFK50N85X IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 850 V | 50 A | 105 mOhms | 30 V | 3.5 V | 152 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 4 A | 850 mOhms | 30 V | 3 V | 8.3 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263HV-2 | N-Channel | 1 Channel | 1.7 kV | 1 A | 16 Ohms | 20 V | 4.5 V | 47 nC | - 55 C | + 150 C | 290 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 32 A | 320 mOhms | 30 V | 6.5 V | 225 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 40 mOhms | 20 V | 3 V | 150 nC | - 55 C | + 150 C | Enhancement | CoolMOS | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 80 A | 14 mOhms | 20 V | 2.5 V | 60 nC | - 55 C | + 175 C | 230 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | ISOPLUS-i5-PAK-3 | N-Channel | 1 Channel | 4.7 kV | 2 A | 20 Ohms | 20 V | 3.5 V | 180 nC | - 55 C | + 150 C | 220 W | Enhancement | ISOPLUS i5-PAC | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 14 A | 550 mOhms | 30 V | 3 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | 30 V | 2.5 V | 82 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 44 A | 190 mOhms | 30 V | 3 V | 198 nC | - 55 C | + 150 C | 1.2 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | 20 V | 3 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 14 A | 450 mOhms | 30 V | 5.5 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 7 A | 1.5 Ohms | 20 V | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||||
Mfr: IXFA6N120P TTI: IXFA6N120P IXYS Availability: 0In StockMOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | 30 V | 5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFK240N15T2 TTI: IXFK240N15T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 240 A | 5.2 mOhms | 20 V | 2.5 V | 460 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 94 A | 55 mOhms | 30 V | 3 V | 228 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFX360N10T TTI: IXFX360N10T IXYS Availability: 0In StockMOSFETs TRENCH HIPERFET PWR MOSFET 100V 360A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 360 A | 2.9 mOhms | 20 V | 2.5 V | 525 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 60 A | 45 mOhms | 20 V | 4.5 V | 255 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 300 mOhms | 30 V | 2.5 V | 17.7 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube |