IXYS - MOSFETs
2.316 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 72 A | 19 mOhms | - 20 V, 20 V | 2.5 V | 82 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 20 A | 185 mOhms | - 30 V, 30 V | 2.5 V | 27 nC | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 34 A | 96 mOhms | - 30 V, 30 V | 3 V | 54 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2 kV | 3 A | 8 Ohms | - 20 V, 20 V | 3 V | 70 nC | - 55 C | + 150 C | 520 W | Enhancement | Polar3 | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 60 A | 40 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 175 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 52 A | 125 mOhms | - 30 V, 30 V | 3.5 V | 245 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 200 V | 86 A | 13 mOhms | - 20 V, 20 V | 4.5 V | 70 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | |||||
Mfr: IXTA3N120HV-TRL TTI: IXTA3N120HV-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 1200V TO263D2 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 20 V, 20 V | 2.5 V | 151 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 96 A | 24 mOhms | - 20 V, 20 V | 5 V | 145 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 120 A | 24 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 175 C | 700 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTX22N100L TTI: IXTX22N100L IXYS Availability: 0In StockMOSFETs LINEAR PWR MOSFET N-CHAN 1000V 22A | 0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 1 kV | 22 A | 600 mOhms | - 30 V, 30 V | 5.5 V | 270 nC | - 55 C | + 150 C | 700 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | - 30 V, 30 V | 5.5 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 14 A | 450 mOhms | - 30 V, 30 V | 5.5 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 600 mA | 30 Ohms | - 20 V, 20 V | 2 V | 13.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 60 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 49 nC | - 55 C | + 175 C | 176 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 7 A | 1.5 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 400 mA | 80 Ohms | - 20 V, 20 V | 2 V | 5.8 nC | - 55 C | + 150 C | 25 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | - 20 V, 20 V | 3 V | 150 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | - 20 V, 20 V | 3 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 44 A | 190 mOhms | - 30 V, 30 V | 3 V | 198 nC | - 55 C | + 150 C | 1.2 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 24 A | 300 mOhms | - 30 V, 30 V | 5 V | 160 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 14 A | 550 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 30 V, 30 V | 2.5 V | 82 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube |