IXYS - MOSFETs
2.318 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 55 V | 110 A | 6.6 mOhms | 20 V | 2 V | 57 nC | - 55 C | + 175 C | 180 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 75 V | 120 A | 7.7 mOhms | 20 V | 2 V | 78 nC | - 55 C | + 175 C | 250 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 75 V | 70 A | 12 mOhms | 20 V | 2 V | 46 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 600 V | 32 A | 350 mOhms | 20 V | 4 V | 196 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 55 V | 90 A | 7 mOhms | 20 V | 4 V | 42 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 68 A | 55 mOhms | 15 V | 4 V | 380 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
Mfr: IXFK120N30P3 TTI: IXFK120N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 120 A | 27 mOhms | 20 V | 3 V | 150 nC | - 55 C | + 150 C | 1.13 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 100 A | 27 mOhms | 20 V | 2.5 V | 185 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 12 A | 500 mOhms | 30 V | 5.5 V | 29 nC | - 55 C | + 150 C | 200 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | 20 V | 4.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 76 A | 42 mOhms | 20 V | 5 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 1.5 A | 40 Ohms | 20 V | 2 V | 41 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | 15 V | 4 V | 185 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 50 V | 48 A | 30 mOhms | Tube | ||||||||||||
Mfr: IXFB110N60P3 TTI: IXFB110N60P3 IXYS Availability: 0In StockMOSFETs 600V 110A 0.056Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 600 V | 110 A | 56 mOhms | 30 V | 5 V | 245 nC | - 55 C | + 150 C | 1.89 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 200 V | 36 A | 45 mOhms | 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.8 mOhms | 20 V | 2.5 V | 78 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 8 A | 500 mOhms | 30 V | 3 V | 12 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | SMPD-24 | N-Channel | 1 Channel | 300 V | 102 A | 20 mOhms | 20 V | 3 V | 376 nC | - 55 C | + 150 C | 570 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 38 A | 50 mOhms | 20 V | 2.5 V | 35 nC | - 55 C | + 150 C | 34 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 102 A | 18 mOhms | 20 V | 2.5 V | 87 nC | - 55 C | + 175 C | 455 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | 30 V | 3 V | 36 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFP6N120P TTI: IXFP6N120P IXYS Availability: 0In StockMOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | 30 V | 5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube |