IXYS - MOSFETs
2.318 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFB132N50P3 TTI: IXFB132N50P3 IXYS Availability: 0In StockMOSFETs 500V 132A 0.039Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 500 V | 132 A | 39 mOhms | 30 V | 5 V | 250 nC | - 55 C | + 150 C | 1.89 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 64 A | 95 mOhms | 30 V | 5 V | 145 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 42 A | 45 mOhms | 30 V | 2.5 V | 21 nC | - 55 C | + 175 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 60 A | 45 mOhms | 20 V | 4.5 V | 255 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
Mfr: FMD47-06KC5 TTI: FMD47-06KC5 IXYS Availability: 0In StockMOSFETs N-Channel Super Coolmos Power MOSFET | 0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-5 | N-Channel | 1 Channel | 600 V | 47 A | 45 mOhms | 20 V | 3 V | 150 nC | - 55 C | + 150 C | Enhancement | CoolMOS, HiPerDyn | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 34 A | 100 mOhms | 30 V | 3.5 V | 56 nC | - 55 C | + 150 C | 40 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | 30 V | 2.5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | 15 V | 2 V | 185 nC | - 55 C | + 150 C | 300 W | Enhancement | TrenchP | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 140 A | 11 mOhms | 20 V | 2 V | 275 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 240 A | 7 mOhms | 20 V | 2 V | 546 nC | - 55 C | + 150 C | 960 W | Enhancement | LinearL2 | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 72 A | 20 mOhms | 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 50 V | 48 A | 30 mOhms | 15 V | 4.5 V | 53 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: IXFH12N90P TTI: IXFH12N90P IXYS Availability: 0In StockMOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 12 A | 900 mOhms | 30 V | 6.5 V | 56 nC | - 55 C | + 150 C | 380 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 42 A | 45 mOhms | HiPerFET | Tube | |||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 200 V | 26 A | 170 mOhms | 20 V | 4 V | 56 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.8 mOhms | 20 V | 2.5 V | 78 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTP8N70X2M TTI: IXTP8N70X2M IXYS Availability: 0In StockMOSFETs 700V/4A Ultra Junct X2-Class MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 700 V | 8 A | 500 mOhms | 30 V | 3 V | 12 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFP60N25X3M TTI: IXFP60N25X3M IXYS Availability: 0In StockMOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 60 A | 19 mOhms | 20 V | 2.5 V | 50 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 110 A | 24 mOhms | 20 V | 3 V | 157 nC | - 55 C | + 150 C | 694 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 75 V | 170 A | 5.4 mOhms | 20 V | 2 V | 109 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH50N50P3 TTI: IXFH50N50P3 IXYS Availability: Not Available OnlineMOSFETs N-Channel: Power MOSFET w/Fast Diode | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 50 A | 120 mOhms | 30 V | 5 V | 85 nC | - 55 C | + 150 C | 960 W | Enhancement | Polar3, HiperFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 3 kV | 2 A | 21 Ohms | 20 V | 3 V | 73 nC | - 55 C | + 150 C | 520 W | Enhancement | Polar3 | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 13 Ohms | 30 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1.5 kV | 20 A | 1 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | HiPerFET | Tube |