IXYS - MOSFETs
2.316 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 160 A | 19 mOhms | - 20 V, 20 V | 5 V | 335 nC | - 55 C | + 150 C | 1.39 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 300 V | 94 A | 36 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | P-Channel | 1 Channel | 200 V | 120 A | 30 mOhms | - 15 V, 15 V | 4.5 V | 740 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 26 A | 240 mOhms | - 30 V, 30 V | 3 V | 42 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 150 V | 15 A | 240 mOhms | Tube | |||||||||||||
Mfr: IXFK80N60P3 TTI: IXFK80N60P3 IXYS Availability: 0In StockMOSFETs 600V 80A 0.07Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 80 A | 70 mOhms | - 30 V, 30 V | 5 V | 190 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFP76N15T2 TTI: IXFP76N15T2 IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 150V 76A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 76 A | 20 mOhms | - 20 V, 20 V | 4.5 V | 97 nC | - 55 C | + 175 C | 350 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 14 A | 550 mOhms | - 30 V, 30 V | 3.5 V | 30 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 650 V | 102 A | 30 mOhms | - 30 V, 30 V | 3 V | 152 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 36 A | 45 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 150 A | 8.3 mOhms | - 20 V, 20 V | 4.5 V | 254 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 140 A | 10 mOhms | - 20 V, 20 V | 2.5 V | 174 nC | - 55 C | + 175 C | 577 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 300 V | 210 A | 5.5 mOhms | - 20 V, 20 V | 2.5 V | 375 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 700 V | 2 A | 850 mOhms | - 30 V, 30 V | 2.5 V | 11.8 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 120 A | 23 mOhms | - 30 V, 30 V | 3 V | 230 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 700 V | 2 A | 850 mOhms | - 30 V, 30 V | 2.5 V | 11.8 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 34 A | 100 mOhms | - 20 V, 20 V | 5.2 V | 29 nC | - 55 C | + 150 C | 446 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 120 A | 22 mOhms | - 20 V, 20 V | 5 V | 152 nC | - 55 C | + 175 C | 714 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 52 A | 73 mOhms | - 20 V, 20 V | 5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | - 30 V, 30 V | 3 V | 93 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 75 A | 21 mOhms | - 20 V, 20 V | 5.5 V | 74 nC | - 55 C | + 175 C | 360 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 50 A | 60 mOhms | - 20 V, 20 V | 5 V | 70 nC | - 55 C | + 175 C | 360 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 82 A | 35 mOhms | - 20 V, 20 V | 5 V | 142 nC | - 55 C | + 150 C | 500 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 22 A | 350 mOhms | - 30 V, 30 V | 3 V | 62 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube |