IXYS - MOSFETs
2.317 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 100 V | 170 A | 14 mOhms | - 20 V, 20 V | 2 V | 240 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 150 V | 36 A | 110 mOhms | - 20 V, 20 V | 4.5 V | 55 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
Mfr: IXFT70N20Q3 TTI: IXFT70N20Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 200V/70A | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 70 A | 40 mOhms | - 30 V, 30 V | 3.5 V | 67 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 200 mA | 30 Ohms | - 20 V, 20 V | 5 V | - 55 C | + 150 C | 1.1 W | Depletion | Tube | ||||||
Mfr: IXFK420N10T TTI: IXFK420N10T IXYS Availability: 0In StockMOSFETs TRENCH HIPERFET PWR MOSFET 100V 420A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 420 A | 2.6 mOhms | - 20 V, 20 V | 5 V | 670 nC | - 55 C | + 175 C | 1.67 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | - 15 V, 15 V | 2 V | 175 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 800 mA | 20 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 20 V, 20 V | 2.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 40 A | 170 mOhms | - 20 V, 20 V | 4.5 V | 320 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 26 A | 90 mOhms | - 15 V, 15 V | 4.5 V | 52 nC | - 55 C | + 150 C | 150 W | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 16 A | 73 mOhms | - 20 V, 20 V | 4.5 V | 208 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 2.5 A | 6 Ohms | - 30 V, 30 V | 5 V | 44.5 nC | - 55 C | + 150 C | 110 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | 150 V | 56 A | 36 mOhms | HiPerFET | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | - 15 V, 15 V | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | - 15 V, 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Trench | Reel | ||||
Mfr: IXTT170N10P TTI: IXTT170N10P IXYS Availability: 0In Stock690 On Order Expected MOSFETs 170 Amps 100V 0.009 Ohm Rds | 0In Stock690 On Order Expected | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 170 A | 9 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 714 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 96 A | 24 mOhms | - 20 V, 20 V | 5 V | 145 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH26N50P TTI: IXFH26N50P IXYS Availability: 0In Stock150 On Order Expected 10-Feb-27 MOSFETs HiPERFET Id26 BVdass500 | 0In Stock150 On Order Expected 10-Feb-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | - 30 V, 30 V | 3 V | 60 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 4.5 kV | 200 mA | 625 Ohms | - 20 V, 20 V | 4 V | 10.6 nC | - 55 C | + 150 C | 113 W | Enhancement | Tube | |||||
0In Stock | Si | Reel | |||||||||||||||||||
Mfr: IXFH320N10T2 TTI: IXFH320N10T2 IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 100V 320A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 320 A | 3.5 mOhms | - 20 V, 20 V | 4 V | 430 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXTP08N100D2 TTI: IXTP08N100D2 IXYS Availability: 0In Stock300 On Order Expected 25-Nov-26 MOSFETs N-CH MOSFETS 1000V 800MA | 0In Stock300 On Order Expected 25-Nov-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | - 20 V, 20 V | 4 V | 14.6 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | ||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 180 A | 8 mOhms | - 20 V, 20 V | 2 V | 390 nC | - 55 C | + 150 C | 560 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube |
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