IXYS - MOSFETs
2.317 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 8 A | 450 mOhms | - 30 V, 30 V | 3 V | 11 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 400 V | 300 mA | 9 Ohms | - 15 V, 15 V | 3.1 V | - 40 C | + 110 C | 2.5 W | Depletion | Reel | ||||||
Mfr: IXFH46N65X2 TTI: IXFH46N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/46A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 46 A | 76 mOhms | - 30 V, 30 V | 2.7 V | 75 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 7 A | 1.9 Ohms | - 30 V, 30 V | - 55 C | + 150 C | 300 W | HiPerFET | Tube | |||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 200 V | 24 A | 150 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 700 V | 2 A | 850 mOhms | - 30 V, 30 V | 2.5 V | 11.8 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1 A | 15 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | Clare | Reel | ||||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | - 20 V, 20 V | 4 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 86 A | 13 mOhms | - 20 V, 20 V | 4.5 V | 70 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6 A | 550 mOhms | - 20 V, 20 V | 4.5 V | 96 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 94 A | 36 mOhms | HiPerFET | Tube | |||||||||||
Mfr: IXFX120N30P3 TTI: IXFX120N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 120 A | 27 mOhms | - 20 V, 20 V | 3 V | 150 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 500 V | 34 A | 180 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | P-Channel | 1 Channel | 200 V | 120 A | 30 mOhms | - 15 V, 15 V | 4.5 V | 740 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 26 A | 240 mOhms | - 30 V, 30 V | 3 V | 42 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK150N30P3 TTI: IXFK150N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 150 A | 19 mOhms | - 20 V, 20 V | 3 V | 197 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 36 A | 190 mOhms | - 30 V, 30 V | 3 V | 102 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 800 V | 60 A | 140 mOhms | - 30 V, 30 V | 5 V | 250 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 50 A | 60 mOhms | - 20 V, 20 V | 5 V | 70 nC | - 55 C | + 175 C | 360 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 120 A | 22 mOhms | - 20 V, 20 V | 5 V | 152 nC | - 55 C | + 175 C | 714 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 140 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 240 nC | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 52 A | 73 mOhms | - 20 V, 20 V | 5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube |
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