IXYS - MOSFETs
2.316 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 300 V | 210 A | 5.5 mOhms | - 20 V, 20 V | 2.5 V | 375 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 700 V | 2 A | 850 mOhms | - 30 V, 30 V | 2.5 V | 11.8 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 120 A | 23 mOhms | - 30 V, 30 V | 3 V | 230 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 700 V | 2 A | 850 mOhms | - 30 V, 30 V | 2.5 V | 11.8 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 34 A | 100 mOhms | - 20 V, 20 V | 5.2 V | 29 nC | - 55 C | + 150 C | 446 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 120 A | 22 mOhms | - 20 V, 20 V | 5 V | 152 nC | - 55 C | + 175 C | 714 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 52 A | 73 mOhms | - 20 V, 20 V | 5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | - 30 V, 30 V | 3 V | 93 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 75 A | 21 mOhms | - 20 V, 20 V | 5.5 V | 74 nC | - 55 C | + 175 C | 360 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 50 A | 60 mOhms | - 20 V, 20 V | 5 V | 70 nC | - 55 C | + 175 C | 360 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 82 A | 35 mOhms | - 20 V, 20 V | 5 V | 142 nC | - 55 C | + 150 C | 500 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 22 A | 350 mOhms | - 30 V, 30 V | 3 V | 62 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 600 mA | 34 Ohms | - 20 V, 20 V | 2 V | 13.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | - 30 V, 30 V | 3 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 44 A | 140 mOhms | - 30 V, 30 V | 5 V | 98 nC | - 55 C | + 150 C | 650 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 55 V | 90 A | 8.4 mOhms | - 20 V, 20 V | 2 V | 42 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 108 A | 13 mOhms | - 20 V, 20 V | 4 V | 240 nC | - 55 C | + 150 C | 312 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 100 V | 90 A | 25 mOhms | - 20 V, 20 V | 4 V | 120 nC | - 55 C | + 150 C | 462 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 60 A | 100 mOhms | - 30 V, 30 V | 2.5 V | 610 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 800 V | 60 A | 140 mOhms | - 30 V, 30 V | 5 V | 250 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH400N075T2 TTI: IXFH400N075T2 IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 75V 400A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 400 A | 2.3 mOhms | - 20 V, 20 V | 4 V | 420 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFT340N075T2 TTI: IXFT340N075T2 IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 75V 340A | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 75 V | 340 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 300 nC | - 55 C | + 175 C | 935 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 55 V | 360 A | 2.4 mOhms | - 20 V, 20 V | 2 V | 330 nC | - 55 C | + 175 C | 935 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFR80N50Q3 TTI: IXFR80N50Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/50A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 50 A | 72 mOhms | - 30 V, 30 V | 3.5 V | 200 nC | - 55 C | + 150 C | 570 W | Enhancement | HiPerFET | Tube |