IXYS - MOSFETs
2.316 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 34 A | 96 mOhms | - 30 V, 30 V | 3 V | 54 nC | - 55 C | + 150 C | 540 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 3 V | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-3P | N-Channel | 200 V | 130 A | 16 mOhms | - 20 V, 20 V | 2.5 V | - 55 C | + 175 C | 830 W | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P | N-Channel | 100 V | 60 A | 18 mOhms | - 30 V, 30 V | 2.5 V | - 55 C | + 175 C | 176 W | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 250 V | 86 A | 37 mOhms | - 20 V, 20 V | 3 V | - 55 C | + 150 C | 540 W | HiPerFET | Tube | |||||||
Mfr: IXTT4N150HV-TRL TTI: IXTT4N150HV-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 1500V TO268AA | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.5 kV | 4 A | 6 Ohms | - 30 V, 30 V | 2.5 V | 44.5 nC | - 55 C | + 150 C | 280 W | Enhancement | Reel | ||||
Mfr: IXTY1R4N120P-TRL TTI: IXTY1R4N120P-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 1200V TO252D | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 13 Ohms | - 30 V, 30 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Polar | Reel | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 650 V | 4 A | 850 mOhms | - 30 V, 30 V | 3 V | - 55 C | + 150 C | 80 W | Reel | ||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 3 A | 1.5 Ohms | - 20 V, 20 V | 2 V | 40 nC | - 55 C | + 150 C | 125 W | Depletion | TrenchHV | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 62 A | 40 mOhms | - 20 V, 20 V | 3 V | 70 nC | - 55 C | + 175 C | 350 W | Enhancement | PolarHT | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 100 A | 13 mOhms | - 20 V, 20 V | 5 V | 240 nC | - 55 C | + 175 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 24 A | 150 mOhms | - 30 V, 30 V | 2.5 V | 98 nC | - 55 C | + 150 C | 208 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 500 V | 8 A | 1.2 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1.2 kV | 17 A | 990 mOhms | - 30 V, 30 V | 5 V | 270 nC | - 55 C | + 150 C | 700 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 1.2 kV | 17 A | 990 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 700 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 82 A | 78 mOhms | - 30 V, 30 V | 5 V | 240 nC | - 55 C | + 150 C | 625 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4 A | 1.5 Ohms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 50 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 10 A | 740 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 200 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 540 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.6 Ohms | - 20 V, 20 V | 5 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 160 A | 7 mOhms | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 74 A | 34 mOhms | - 20 V, 20 V | 2.5 V | 107 nC | - 55 C | + 175 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 48 A | 135 mOhms | - 30 V, 30 V | 3 V | 150 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||
Mfr: MMIX1F44N100Q3 TTI: MMIX1F44N100Q3 IXYS Availability: 0In StockMOSFETs HiperFET Pwr MOSFET Q3-Class | 0In Stock | Si | SMD/SMT | SMPD-24 | N-Channel | 1 kV | 30 A | 245 mOhms | - 30 V, 30 V | 264 nC | - 55 C | + 150 C | HiPerFET | Tube |