IXYS - MOSFETs
2.318 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.6 A | 10 Ohms | 20 V | 4.5 V | 27 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 3 A | 4.8 Ohms | 20 V | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 96 A | 24 mOhms | 20 V | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 10.5 Ohms | 20 V | 4.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1.2 kV | 26 A | 500 mOhms | 30 V | 6.5 V | 255 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 86 A | 29 mOhms | 30 V | - 55 C | + 175 C | 480 W | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 86 A | 29 mOhms | 30 V | 5 V | 90 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 100 A | 7 mOhms | 20 V | 2 V | 25.5 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 40 V | 120 A | 6.1 mOhms | 20 V | 2 V | - 55 C | + 175 C | 200 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 75 V | 70 A | 12 mOhms | 20 V | 2 V | 46 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 100 mA | 80 Ohms | 20 V | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 72 A | 20 mOhms | 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 700 V | 12 A | 300 mOhms | 30 V | 2.5 V | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 48 A | 65 mOhms | 30 V | 3 V | 76 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 700 V | 12 A | 300 mOhms | 30 V | 2.5 V | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-3P | N-Channel | 200 V | 130 A | 16 mOhms | 20 V | 2.5 V | - 55 C | + 175 C | 830 W | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 16 A | 950 mOhms | 30 V | 3.5 V | 120 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | 20 V | 2.5 V | 104 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 3 A | 6 Ohms | 20 V | 4.5 V | 37.5 nC | - 55 C | + 150 C | 125 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1.2 kV | 30 A | 350 mOhms | 30 V | 6.5 V | 310 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTH1N200P3HV TTI: IXTH1N200P3HV IXYS Availability: 0In StockMOSFETs 2000V/1A HV Power MOSFET, TO-247HV | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 2 kV | 1 A | 40 Ohms | 20 V | 2 V | 23.5 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 295 mOhms | 30 V | 3 V | 42 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTA120P065T-TRL TTI: IXTA120P065T-TRL IXYS Availability: 0In StockMOSFETs P-CH SINGLE -65V TO263D2 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | 15 V | 2 V | 185 nC | - 55 C | + 150 C | 289 W | Enhancement | TrenchP | Reel |