IXYS - MOSFETs
2.316 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 750 mA | 17 Ohms | - 30 V, 30 V | 4.5 V | 7.8 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 160 A | 7 mOhms | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1.2 kV | 20 A | 570 mOhms | - 30 V, 30 V | 6.5 V | 193 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 20 A | 390 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 86 A | 29 mOhms | - 30 V, 30 V | - 55 C | + 175 C | 480 W | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 86 A | 29 mOhms | - 30 V, 30 V | 5 V | 90 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 110 A | 24 mOhms | - 20 V, 20 V | 3 V | 157 nC | - 55 C | + 175 C | 694 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 55 V | 260 A | 3.3 mOhms | - 20 V, 20 V | 4 V | 140 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 200 V | 30 A | 93 mOhms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | Tube | ||||||||||||
Mfr: IXFQ22N60P3 TTI: IXFQ22N60P3 IXYS Availability: 0In StockMOSFETs 600V 22A 0.36Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 22 A | 360 mOhms | - 30 V, 30 V | 5 V | 38 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | HiPerFET | Tube | ||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 7 A | 1.9 Ohms | - 30 V, 30 V | 3 V | 47 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 16 A | 470 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 347 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | - 20 V, 20 V | 2.5 V | 30 nC | - 55 C | + 150 C | 347 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 3 kV | 400 mA | 190 Ohms | - 20 V, 20 V | 2 V | 13 nC | - 55 C | + 150 C | 104 W | Enhancement | Tube | |||||
Mfr: IXTA180N10T7-TRL TTI: IXTA180N10T7-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 100V TO263D2 | 0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 30 V, 30 V | 2.5 V | 151 nC | - 55 C | + 175 C | 480 W | Enhancement | TrenchMVT | Reel | |||
Mfr: IXTA230N075T2-TRL TTI: IXTA230N075T2-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 75V TO263D2 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | - 20 V, 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | TrenchT2 | Reel | |||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 55 V | 260 A | 3.3 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 3.6 A | 3.4 Ohms | - 30 V, 30 V | 3 V | 14.2 nC | - 55 C | + 150 C | 100 W | Enhancement | Polar | Reel | ||||
0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-3 | N-Channel | 3 kV | 1.6 A | 21 Ohms | - 20 V, 20 V | 3 V | - 55 C | + 150 C | 160 W | Polar3 | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 700 V | 12 A | 300 mOhms | - 30 V, 30 V | 2.5 V | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | TO-268-3 | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 3 V | 155 nC | 600 W | Enhancement | PolarHV | Reel | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 300 mOhms | - 30 V, 30 V | 2.5 V | - 55 C | + 150 C | 40 W | Enhancement | HiPerFET | Tube |