IXYS - MOSFETs
2.317 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 50 A | 60 mOhms | - 20 V, 20 V | 2.5 V | 70 nC | - 55 C | + 175 C | 360 W | Enhancement | PolarHT | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 50 A | 60 mOhms | - 30 V, 30 V | 3 V | 78 nC | - 55 C | + 150 C | 400 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 250 V | 86 A | 37 mOhms | - 20 V, 20 V | 3 V | - 55 C | + 150 C | 540 W | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 250 A | 6.5 mOhms | - 20 V, 20 V | 3 V | 205 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFR24N100Q3 TTI: IXFR24N100Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/18A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 18 A | 490 mOhms | - 30 V, 30 V | 140 nC | 500 W | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 100 V | 130 A | 9.1 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 150 V | 22 A | 120 mOhms | Tube | |||||||||||||
Mfr: IXFA230N075T2-TRL TTI: IXFA230N075T2-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 75V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | - 20 V, 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | Reel | ||||
Mfr: IXFX66N85X TTI: IXFX66N85X IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 850 V | 66 A | 65 mOhms | - 30 V, 30 V | 3.5 V | 230 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.7 kV | 16 A | - 20 V, 20 V | 2.5 V | 65 nC | - 55 C | + 150 C | 150 W | Enhancement | BIMOSFET | Tube | |||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1.1 kV | 40 A | 260 mOhms | - 30 V, 30 V | 3.5 V | 300 nC | - 55 C | + 150 C | 1.56 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFT32N100XHV TTI: IXFT32N100XHV IXYS Availability: 0In StockMOSFETs 1000V 32A TO-268HV Power MOSFET | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1 kV | 32 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 130 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 18 A | 200 mOhms | - 30 V, 30 V | 3 V | 29 nC | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 80 A | 38 mOhms | - 30 V, 30 V | 3.5 V | 140 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 650 V | 60 A | 52 mOhms | - 30 V, 30 V | 3.5 V | 108 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1 kV | 70 A | 89 mOhms | - 30 V, 30 V | 3.5 V | 350 nC | - 55 C | + 150 C | 1.785 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.5 kV | 12 A | 2.2 Ohms | - 30 V, 30 V | 2.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | HiPerFET | Tube | ||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 32 A | 270 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1 A | 15 Ohms | - 20 V, 20 V | 2.5 V | 15.5 nC | - 55 C | + 150 C | 50 W | Enhancement | Polar | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 76 A | 22 mOhms | - 20 V, 20 V | 2.5 V | 97 nC | - 55 C | + 175 C | 350 W | Enhancement | TrenchT2 | Reel | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 175 V | 150 A | 9.7 mOhms | - 20 V, 20 V | 2.5 V | 233 nC | - 55 C | + 175 C | 880 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 1 kV | 2.1 A | 3.3 Ohms | - 20 V, 20 V | 3 V | 26 nC | - 55 C | + 150 C | 40 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFQ50N50P3 TTI: IXFQ50N50P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 50 A | 125 mOhms | - 30 V, 30 V | 5 V | 85 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube |
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