IXYS - MOSFETs
2.318 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 90 A | 33 mOhms | 20 V | 5.2 V | 95 nC | - 55 C | + 150 C | 960 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 4.5 kV | 1.4 A | 40 Ohms | 20 V | 6 V | 88 nC | - 55 C | + 150 C | 960 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 800 mA | 4.6 Ohms | 20 V | 4.5 V | 12.7 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 800 mA | 4.6 Ohms | 20 V | 2.5 V | 12.7 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 90 A | 25 mOhms | 20 V | 2 V | 120 nC | - 55 C | + 150 C | 462 W | Enhancement | Tube | |||||
Mfr: IXFX64N60P3 TTI: IXFX64N60P3 IXYS Availability: 0In StockMOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 64 A | 95 mOhms | 30 V | 5 V | 145 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 94 A | 55 mOhms | 30 V | 3 V | 228 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 230 A | 7.5 mOhms | 20 V | 5 V | 358 nC | - 55 C | + 175 C | 1.67 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 230 A | 7.5 mOhms | 20 V | 3 V | 358 nC | - 55 C | + 175 C | 1.67 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 64 A | 85 mOhms | 30 V | 3 V | 150 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 250 V | 100 A | 27 mOhms | 20 V | 5 V | 185 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | ||||
Mfr: IXTT10N100D2 TTI: IXTT10N100D2 IXYS Availability: 0In StockMOSFETs D2 Depletion Mode Power MOSFETs | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1 kV | 10 A | 1.5 Ohms | 20 V | 4.5 V | 200 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | ||||
Mfr: IXFT94N30P3 TTI: IXFT94N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 94 A | 36 mOhms | 20 V | 3 V | 102 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXTH26P20P TTI: IXTH26P20P IXYS Availability: Not Available OnlineMOSFETs -26.0 Amps -200V 0.170 Rds | Not Available Online | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 26 A | 170 mOhms | 20 V | 4 V | 56 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | 20 V | 4 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 18 A | 120 mOhms | 15 V | 4.5 V | 39 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 500 V | 20 A | 450 mOhms | 20 V | 2 V | 103 nC | - 55 C | + 150 C | 460 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 250 V | 90 A | 33 mOhms | 20 V | 4.5 V | 640 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | ||||
Mfr: IXFH80N25X3 TTI: IXFH80N25X3 IXYS Availability: 0In StockMOSFETs 250V/80A Ultra Junct ion X3-Class MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 80 A | 16 mOhms | 20 V | 2.5 V | 83 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 750 mA | 17 Ohms | 30 V | 2.5 V | 7.8 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 15 A | 480 mOhms | 20 V | 2.5 V | 123 nC | - 55 C | + 150 C | 300 W | Enhancement | Linear L2 | Tube | ||||
Mfr: IXFK50N85X TTI: IXFK50N85X IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 850 V | 50 A | 105 mOhms | 30 V | 3.5 V | 152 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 4 A | 850 mOhms | 30 V | 3 V | 8.3 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263HV-2 | N-Channel | 1 Channel | 1.7 kV | 1 A | 16 Ohms | 20 V | 4.5 V | 47 nC | - 55 C | + 150 C | 290 W | Depletion | Tube |