IXYS - MOSFETs
2.317 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 70 A | 45 mOhms | - 20 V, 20 V | 3.5 V | 150 nC | - 55 C | + 150 C | 625 W | Enhancement | CoolMOS | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 19 A | 190 mOhms | - 30 V, 30 V | 2.5 V | 93 nC | - 55 C | + 150 C | 156 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 140 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 240 nC | - 55 C | + 175 C | 800 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 48 A | 100 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 500 W | Enhancement | HyperFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 22 A | 270 mOhms | - 30 V, 30 V | 5.5 V | 50 nC | - 55 C | + 150 C | 350 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | - 30 V, 30 V | 5.5 V | 65 nC | - 55 C | + 150 C | 400 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 10 A | 740 mOhms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 3.5 A | 3 Ohms | - 30 V, 30 V | 5.5 V | 14.2 nC | - 55 C | + 150 C | 100 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 1 A | 20 Ohms | - 20 V, 20 V | 4.5 V | 17.6 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 500 V | 11 A | 750 mOhms | - 20 V, 20 V | 5 V | 130 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 500 V | 46 A | 160 mOhms | - 30 V, 30 V | 6 V | 260 nC | - 55 C | + 150 C | 700 W | Enhancement | Tube | |||||
Mfr: IXFQ94N30P3 TTI: IXFQ94N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 94 A | 36 mOhms | - 20 V, 20 V | 3 V | 102 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 12 A | 2 Ohms | - 30 V, 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 140 A | 10 mOhms | - 15 V, 15 V | 4 V | 400 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 180 A | 12.9 mOhms | - 20 V, 20 V | 5 V | 345 nC | - 55 C | + 150 C | 1.39 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK78N50P3 TTI: IXFK78N50P3 IXYS Availability: 0In StockMOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 78 A | 68 mOhms | - 30 V, 30 V | 5 V | 147 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 69 A | 49 mOhms | - 20 V, 20 V | 5 V | 156 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 150 A | 15 mOhms | - 20 V, 20 V | 3 V | 177 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFX150N30P3 TTI: IXFX150N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 150 A | 19 mOhms | - 20 V, 20 V | 3 V | 197 nC | - 55 C | + 150 C | 1.3 mW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFB44N100Q3 TTI: IXFB44N100Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/44A | 0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1 kV | 44 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 264 nC | - 55 C | + 150 C | 1.56 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFK220N17T2 TTI: IXFK220N17T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET Pwr MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 170 V | 220 A | 6.3 mOhms | - 20 V, 20 V | 5 V | 500 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFR15N100Q3 TTI: IXFR15N100Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/10A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 10 A | 1.2 Ohms | - 30 V, 30 V | 3.5 V | 64 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 240 A | 7 mOhms | - 20 V, 20 V | 2 V | 546 nC | - 55 C | + 150 C | 960 W | Enhancement | LinearL2 | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 44 A | 40 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube |
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