IXYS - MOSFETs
2.318 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 12 A | 500 mOhms | 30 V | 5.5 V | 29 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 80 A | 17 mOhms | 20 V | 2.5 V | 80 nC | - 55 C | + 175 C | 325 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-3 | N-Channel | 1 Channel | 4.5 kV | 1.4 A | 40 Ohms | 20 V | 4 V | 88 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SMPD-24 | N-Channel | 1 Channel | 40 V | 600 A | 1.3 mOhms | 20 V | 1.5 V | 590 nC | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-3 | N-Channel | 1 Channel | 4.5 kV | 200 mA | 625 Ohms | 20 V | 4 V | 10.6 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | 15 V | 4 V | 175 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3 A | 4.8 Ohms | 20 V | 4.8 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 250 V | 64 A | 49 mOhms | 20 V | 2.5 V | 105 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 10 A | 740 mOhms | 30 V | 3 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 250 V | 150 A | 9 mOhms | 10 V | 2.5 V | 154 nC | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTA110N055T2-TRL TTI: IXTA110N055T2-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 550V TO263D2 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 55 V | 110 A | 6.6 mOhms | 20 V | 2 V | 57 nC | - 55 C | + 175 C | 180 W | Enhancement | TrenchT2 | Reel | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 2 A | 2.3 Ohms | 30 V | 3 V | 4.3 nC | - 55 C | + 150 C | 55 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.4 Ohms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 8 A | 320 mOhms | 30 V | 3.5 V | 113 nC | - 55 C | + 150 C | 860 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFB100N50Q3 TTI: IXFB100N50Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/100A | 0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 500 V | 100 A | 49 mOhms | 30 V | 3.5 V | 255 nC | - 55 C | + 150 C | 1.56 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 30 A | 60 mOhms | 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 42 A | 84 mOhms | 20 V | 3 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHT | Reel | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 850 V | 8 A | 850 mOhms | 30 V | 3 V | 17 nC | 200 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 2.5 kV | 1.5 A | 40 Ohms | 20 V | 2 V | 41 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: IXFA130N10T2 TTI: IXFA130N10T2 IXYS Availability: 0In StockMOSFETs Trench T2 HiperFET Power MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 100 V | 130 A | 9.1 mOhms | 20 V | 4.5 V | 130 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 150 V | 10 A | 350 mOhms | 15 V | 4.5 V | 36 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 300 A | 2.5 mOhms | 20 V | 4 V | 145 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 44 A | 130 mOhms | 20 V | 4.5 V | 330 nC | - 55 C | + 150 C | 560 W | Enhancement | HiPerFET | Tube |