Toshiba - MOSFETs
3.840 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 30 V | 122 A | 2.9 mOhms | 20 V | 1.1 V | 26 nC | - 55 C | + 175 C | 75 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: TK31V60W5,LVQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSIV 600V 240W 3000pF 30.8A | 0In Stock | Si | SMD/SMT | DFN8x8-5 | N-Channel | 1 Channel | 600 V | 30.8 A | 87 mOhms | 30 V | 3 V | 105 nC | + 150 C | 240 W | Enhancement | DTMOSIV | Reel | |||||
Mfr: SSM6N37FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET ID=0.25A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 250 mA | 1.65 Ohms | 10 V | 350 mV | - 55 C | + 150 C | 300 mW | Enhancement | U-MOSIII | Reel | |||||
0In Stock | Si | SMD/SMT | USM-3 | P-Channel | 1 Channel | 20 V | 100 mA | 8 Ohms | - 10 V, 20 V | 600 mV | + 150 C | 150 mW | Enhancement | Reel | ||||||||
Mfr: SSM6K514NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small Low ON Resistane MOSFETs | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 40 V | 12 A | 8.9 mOhms | 20 V | 1.4 V | 7.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSIX-H | Reel | ||||
Not Available Online | Si | SMD/SMT | VESM-3 | P-Channel | 1 Channel | 20 V | 800 mA | 4 Ohms | - 8 V, 6 V | 1 V | 1.6 nC | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
Not Available Online | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 30 V | 2 A | 93 mOhms | 12 V | 1 V | 1.5 nC | - 55 C | + 150 C | 800 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 30 V | 6 A | 27.6 mOhms | 20 V | 2.5 V | 10.1 nC | - 55 C | + 150 C | 800 mW | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||||
0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 1 Channel | 30 V | 1.6 A | 122 mOhms | 20 V | 2.6 V | 5.1 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
Mfr: TK4R4P06PL,RQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60V 3280pF 48.2nC 106A 87W | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 106 A | 3.4 mOhms | 20 V | 1.5 V | 48.2 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: SSM3K72KFS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.3A VDSS=60V | 0In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 60 V | 300 mA | 1.05 Ohms | 20 V | 1.1 V | 600 pC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
Mfr: SSM6N39TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=1.6A VDSS=20V | 0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 2 Channel | 20 V | 1.6 A | 87 mOhms, 87 mOhms | 10 V | 350 mV | 7.5 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 5.5 A | 29.8 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | S-Mini-3 | P-Channel | 1 Channel | 20 V | 2 A | 150 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | - 55 C | + 150 C | 1.2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 23 mOhms | 10 V | 1 V | 16.6 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII | Reel | |||||
Mfr: TK16J60W5,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-3PN(OS) PD=130W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 230 mOhms | 30 V | 4.5 V | 43 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK17A65W5,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 230 mOhms | 30 V | 4.5 V | 50 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK3R9E10PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 100 A | 5.8 mOhms | 20 V | 2.5 V | 96 nC | - 55 C | + 175 C | 230 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: TK4K1A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 2 A | 4.1 Ohms | 30 V | 4 V | 8 nC | - 55 C | + 150 C | 30 W | Enhancement | MOSIX | Tube | ||||
Mfr: TK4R1A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=54W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 80 A | 5.9 mOhms | 20 V | 2.5 V | 104 nC | - 55 C | + 175 C | 54 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: TJ30S06M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 68W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 30 A | 21.8 mOhms | - 20 V, 10 V | 3 V | 80 nC | + 175 C | 68 W | Enhancement | AEC-Q101 | Reel | TJ30S06M3L,LXHQ(O | ||||
Mfr: TK100S04N1L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 180W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 100 A | 2.3 mOhms | 20 V | 2.5 V | 76 nC | + 175 C | 180 W | Enhancement | AEC-Q101 | Reel | TK100S04N1L,LXHQ(O | ||||
0In Stock | Si | SMD/SMT | SOP-8 | P-Channel | 1 Channel | 30 V | 45 A | 4 mOhms | - 25 V, 20 V | 2 V | 190 nC | + 150 C | 45 W | Enhancement | ||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6.5 A | 950 mOhms | 20 V | 3 V | 13 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: SSM3J145TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-3A U | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3 A | 103 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel |