Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: TK31J60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 30.8A 230W FET 600V 3000pF 86nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 30.8 A | 88 mOhms | - 30 V, 30 V | 105 nC | 230 W | DTMOSIV | Tube | ||||||||
Mfr: TK10Q60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 9.7 A | 327 mOhms | - 30 V, 30 V | 3.7 V | 20 nC | - 55 C | + 150 C | 80 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK39A60W,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSIV 600 V 50W 4100pF 38.8A | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 55 mOhms | - 30 V, 30 V | 3.7 V | 110 nC | - 55 C | + 150 C | 50 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK35A65W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChannel 068ohm DTMOS | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 650 V | 35 A | 68 mOhms | - 30 V, 30 V | 3.5 V | 100 nC | - 55 C | + 150 C | 50 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK6A80E,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 800V 1700m (VGS=10V) TO-220SIS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6 A | 1.35 Ohms | - 30 V, 30 V | 4 V | 32 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVIII | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 9.5 A | 550 mOhms | - 20 V, 20 V | 3 V | 19 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSVI | Tube | |||||
Mfr: TK200F04N1L,LXGQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 375W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TO-220SM-3 | N-Channel | 1 Channel | 40 V | 200 A | 900 uOhms | - 20 V, 20 V | 3 V | 214 nC | + 175 C | 375 W | Enhancement | AEC-Q101 | Reel | TK200F04N1L,LXGQ(O | ||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | 30 V | 4 V | 28 nC | + 150 C | 150 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 100 V | 2 A | 125 mOhms | 20 V | 2.5 V | 3.6 nC | + 150 C | 2 W | Enhancement | Reel | ||||||||
Mfr: SSM5N16FUTE85LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A 20V 2-in-1 | 0In Stock | Si | SMD/SMT | SOT-353-5 | N-Channel | 2 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 600 mV | - 55 C | + 150 C | 200 mW | Enhancement | Reel | ||||||
Mfr: SSM6L820R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS N-ch + P-ch Low Voltage Gate Drive VDSS:30V IC:4A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | N-Channel, P-Channel | 2 Channel | 30 V | 4 A | 39.1 mOhms, 45 mOhms | - 8 V, 12 V | 1 V | 6.7 nC | + 150 C | 1.4 W | Enhancement | AEC-Q101 | Reel | SSM6L820R,LXHF(B | ||||
Mfr: TK1K0A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=40W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 7.5 A | 1 Ohms | - 30 V, 30 V | 4 V | 24 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSIX | Tube | ||||
Mfr: TK46A08N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 6.9ohm VGS10V10uAVDS80V | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 80 V | 46 A | 6.9 mOhms | - 20 V, 20 V | 4 V | 37 nC | - 55 C | + 150 C | 35 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK10A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 500V VDSS 700V 45W 1200pF 10A | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 10 A | 720 mOhms | 45 W | MOSVII | Tube | ||||||||||
Mfr: TK11A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 10A 40V 25W 410pF 520 mOhms | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 500 V | 11 A | 520 mOhms | 25 W | MOSVII | Tube | ||||||||||
Mfr: TK40E10N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 40V N0Ch PWR FET 90A 126W 3000pF | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 90 A | 8.2 mOhms | - 20 V, 20 V | 126 W | U-MOSVIII-H | Tube | |||||||||
Mfr: TPH14006NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 60V 34A 16nC MOSFET | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 34 A | 11 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 150 C | 32 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 20 V | 180 mA | 1.1 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 100 mW | Enhancement | Reel | |||||||
Mfr: TK6R8A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 6.8mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 58 A | 6.8 mOhms | - 20 V, 20 V | 3.5 V | 39 nC | + 175 C | 41 W | Enhancement | Tube | TK6R8A08QM,S4X(S | |||||
Mfr: TPH5900CNH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 150V 64mOhm (VGS=10V) SOP-ADV | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 150 V | 18 A | 50 mOhms | - 20 V, 20 V | 4 V | 7 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TPWR8004PL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-CH Mosfet 40V 150A 8DSOP | 0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 40 V | 150 A | 800 uOhms | - 20 V, 20 V | 1.4 V | 103 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: TPN4R712MD,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Channel Mosfet 20V UMOS-VI | 0In Stock | Si | SMD/SMT | TSON-8 | P-Channel | 1 Channel | 20 V | 36 A | 4.7 mOhms | - 12 V, 12 V | 500 mV | 65 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM3K341R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 60V 6A 9.3nC MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | - 20 V, 20 V | 1.5 V | + 175 C | 1.2 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||||
Mfr: SSM3J15FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET High Speed Switching | 0In Stock | Si | SMD/SMT | SOT-323-3 | P-Channel | 1 Channel | 30 V | 100 mA | 12 Ohms | - 20 V, 20 V | 1.1 V | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 2 A | 225 mOhms | - 20 V, 20 V | 1.2 V | - 55 C | + 150 C | 800 mW | Enhancement | AEC-Q101 | Reel |